NBB-302_06 Datasheet, PDF (2/8 Pages) RF Micro Devices – CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz

NBB-302
Absolute Maximum Ratings
Parameter
Rating
Unit
RF Input Power
+20
dBm
Power Dissipation
300
mW
Device Current
70
mA
Channel Temperature
200
°C
Operating Temperature
-45 to +85
°C
Storage Temperature
-65 to +150
°C
Exceeding any one or a combination of these limits may cause permanent damage.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Overall
Small Signal Power Gain, S21
Gain Flatness, GF
Input and Output VSWR
Bandwidth, BW
Output Power @
-1dB Compression, P1dB
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
Device Voltage, V_D
Gain Temperature Coefficient,
δG_T/δT
MTTF versus Temperature
@ I_CC=50mA
Case Temperature
Junction Temperature
MTTF
Thermal Resistance
θ_JC
Specification
Min.
Typ.
Max.
12.0
13.5
11.0
13.0
12.5
9.0
10.5
9.5 (avg.)
±0.6
2.4:1
2.0:1
2.8:1
12.5
13.7
14.8
11.0
5.5
+23.5
-15
3.6
3.9
4.2
-0.0015
85
122.9
>1,000,000
194
Unit
dB
dB
dB
dB
dB
dB
GHz
dBm
dBm
dBm
dB
dBm
dB
V
dB/°C
Condition
V_D=+3.9V, I_CC=50mA, Z₀=50Ω, T_A=+25°C
f=0.1GHz to 1.0GHz
f=1.0GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=6.0GHz to 12.0GHz
f=12.0GHz to 14.0GHz
f=0.1GHz to 8.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 12.0GHz
f=12.0GHz to 15.0GHz
BW3 (3dB)
f = 2.0 GHz
f = 6.0 GHz
f = 14.0 GHz
f = 3.0 GHz
f = 2.0 GHz
f=0.1GHz to 12.0GHz
°C
°C
hours
°C/W
-^J--^T----–-----^T----^C---^A---^S---^E-
V_D ⋅ I_CC
=
θ_JC(°C ⁄ Watt)
4-10
Rev A6 060124