RFG1M20090 Datasheet, PDF (10/11 Pages) RF Micro Devices – 90W GaN Power Amplifier

RFG1M20090
1.93GHz to 2.17GHz Evaluation Board Layout
Frequency (MHz)
1800*
1930
1990
2110
2170
Device Impedances
Z Source (Ω)
20.4 - j14.5
17.9 - j6.4
15.3 - j5.5
12.0 - j2.6
11.7 - j1.1
Z Load (Ω)
4.1 + j0.9
4.7 + j0.9
4.8 + j0.8
4.8 - j0.0
4.3 - j0.4
Note: Device impedances reported are the measured evaluation board impedances chosen for a
tradeoff of efficiency, peak power, and linearity performance across the entire frequency bandwidth.
*1800MHz impedances are based on loadpull measurements; all other impedances are the
measured evaluation board impedances.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS130823
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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