SZM-3066Z Datasheet, PDF (1/12 Pages) SIRENZA MICRODEVICES – 3.3-3.8GHz 2W Power Amplifier

SZM-3066Z
3.3GHz to
3.8GHz 2 W
Power Ampli-
fier
SZM-3066Z
3.3GHz to 3.8GHz 2W POWER AMPLIFIER
Package: QFN, 6mmx6mm
Product Description
RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) ampli-
fier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This
HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an
ideal combination of low cost and high reliability. This product is specifically designed as a final
or driver stage for 802.16 equipment in the 3.3GHz to 3.8GHz bands. It can run from a 3V to
6V supply. The external output match and bias adjustability allows load line optimization for
other applications or over narrower bands. It features an output power detector, on/off power
control and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by
switching the second stage Power up/down control. This product features a RoHS compliant
and Green package with matte tin finish, designated by the ‘Z’ suffix.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
 ^{InGaP HBT}
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Features
 P_1dB=33.5dBm at 5V
 Three Stages of Gain:34dB
 802.11g 54Mb/s Class AB Per-
formance
 P_OUT=26dBm at 2.5% EVM, V_CC
5 V,730 mA
 Active Bias with Adjustable Cur-
rent
 On-Chip Output Power Detector
 Low Thermal Resistance
 Power Up/Down Control <1μs
 Attenuator Step 20dB at
V_PC2 = 0 V
 Class 1B ESD Rating
Applications
 802.16 WiMAX Driver or Output
Stage
 Fixed Wireless, WLL
Parameter
Specification
Min.
Typ.
Max.
Unit
Frequency of Operation
3300
3800
MHz
Output Power at 1dB Compression
33.5
dBm
Gain
32.5
34.0
dBm
Output power
26.0
dBm
Third Order Suppression
-38.0
-33.0
dBc
Noise Figure
5.0
dB
Worst Case Input Return Loss
11.0
14.0
dB
Worst Case Output Return Loss
6.0
9.0
dB
Supply voltage range
3.0
5.0
6.0
V
Output Voltage Range
0.9 to 2.2
V
Quiescent Current
540
600
660
mA
Power Up Control Current
5.0
mA
VCC Leakage Current
0.1
mA
Thermal Resistance
12.0
°C/W
Test Conditions: 3.3GHz to 3.8GHz App circuit, Z₀=50Ω, V_CC=5V, I_Q=600mA, T_BP=30°C
Condition
3.5 GHz
@ P_OUT=26dBm-3.5GHz
@ 2.5% EVM 802.11g 54Mb/s - 3.5GHz
P_OUT=23dBm per tone - 3.5GHz
@ 3.6GHz
3.3GHz to 3.8GHz
3.3GHz to 3.8GHz
for P_OUT=10dBm to 30dBm
V_CC = 5 V
V_PC= 5V, I_VPC1 + I_VPC2+ I_VPC3
V_CC=5V, V_PC=0V
junction - lead
DS131017
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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