SZM-2066Z Datasheet, PDF (1/18 Pages) SIRENZA MICRODEVICES – 2.4-2.7GHz 2W Power Amplifier

SZM-2066Z
2.4GHz to
2.7GHz 2W
Power Ampli-
fier
SZM-2066Z
2.4GHz to 2.7GHz 2W POWER AMPLIFIER
Package: QFN, 6mmx6mm
Product Description
RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor
(HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip
module package. This HBT amplifier is made with InGaP on GaAs device technology
and fabricated with MOCVD for an ideal combination of low cost and high reliability.
This product is specifically designed as a final or driver stage for 802.16 and
802.11b/g equipment in the 2.4GHz to 2.7GHz bands. It can run from a 3V to 5V
supply. The external output match and bias adjustability allows load line optimiza-
tion for other applications or over narrower bands. It features an output power
Optimum Technology ^{detector, on/off power control and high RF overdrive robust-}
Matching® Applied _{ness. A 20dB step attenuator feature can be utilized by switch-}
GaAs HBT
ing the second stage Power up/down control.
GaAs MESFET
 InGaP HBT
Vcc = 5V
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
RFIN
Si CMOS
RFOUT
Si BJT
GaN HEMT
Vbias = 5V
Stage 1
Bias
Stage 2
Bias
Stage 3
Bias
InP HBT
RF MEMS
LDMOS
Pow er
Up/Dow n
Control
Pow er
Detector
Features
 P_1dB= 33.5dBm at 5V
 Three Stages of Gain:37dB
 802.11g 54Mb/s Class AB Per-
formance
 P_OUT=26dBm at 2.5% EVM, VCC
5V, 690mA
 Active Bias with Adjustable Cur-
rent
 On-Chip Output Power Detector
 Low Thermal Resistance
 Power Up/Down Control <1s
 Attenuator Step 20dB at
V_PC2 = 0 V
Applications
 802.16 WiMAX Driver or Output
Stage
 802.11b/g WiFi, WiFi
Parameter
Specification
Min.
Typ.
Frequency of Operation
2500
Output Power at 1dB Compression
32.0
33.5
Small Signal Gain
32.2
33.7
EVM
2.5
Third Order Supression
-45.0
Noise Figure
7.7
Worst Case Input Return Loss
7.5
10.5
Worst Case Output Return Loss
12.5
15.5
Output Voltage Range
0.9 to 1.8
Quiescent Current
454
583
Power Up Control Current
4.0
VCC Leakage Current
Thermal Resistance
12.0
Test Conditions: Z₀=50, V_CC=5V, I_Q=583mA, T_BP=30°C
Max.
2700
-40.0
659
100
Unit
MHz
dBm
dB
%
dBc
dB
dB
dB
V
mA
mA
A
°C/W
Condition
2.7 GHz
2.7 GHz
2.7GHz, 802.11g 54Mb/s at P_OUT=26dBm
2.7GHz, P_OUT=23dBm per tone
2.7 GHz
2.5GHz to 2.7GHz
2.5GHz to 2.7GHz
P_OUT=10dBm to 33dBm
V_CC = 5 V
V_PC=5V, I_VPC1+ I_VPC2+I_VPC3
V_CC=5V, V_PC=0V
junction - lead
DS110620
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
1 of 18