SZA-6044 Datasheet, PDF (1/8 Pages) SIRENZA MICRODEVICES – 5.1- 5.9 GHz 1/4 Watt Power Amplifier with Active Bias

SZA-6044
5.1 GHz to 5.9
GHz ¼Watt
Power Ampli-
fier with Active
Bias
SZA-6044
5.1GHzto5.9GHz ¼WATT POWER AMPLIFIER
WITH ACTIVE BIAS
Package: QFN, 4mmx4mm
Product Description
RFMD’s SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor
(HBT) amplifier housed in a low-cost surface-mountable plastic package. These
HBT amplifiers are fabricated using molecular beam epitaxial growth technology
which produces reliable and consistent performance from wafer to wafer and lot to
lot. This product is specifically designed as a driver or final stage amplifier for equip-
ment in the 5.1GHzto5.9GHz band. It can run from a 3Vto5V supply. Load line
optimization for target band is possible outside the package. Its high linearity
makes it an ideal choice for multicarrier and digital applications.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
 ^{InGaP HBT}
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Features
 Single 3V to 5V Operation
 High Linearity Class A
OIP₃=39dBm at 5V
 802.11a 54Mb/s
P_OUT=17dBm at 3% EVM
 P_1dB 24dBm at 5V, 21dBm at
3.3 V
 Surface Mount Plastic Pack-
age
 Power Up/Down Control <1s
Applications
 OFDM
 Multicarrier Applications
 802.11a WiFi Driver Stage
 Fixed Wireless, UNII
Parameter
Frequency of Operation,
Output Power at 1dB Compression
Small Signal Gain
Worst Case Input Return Loss
Worst Case Output Return Loss
Output IP₃
P_OUT
Min.
5100
22.5
17.0
14.9
8.0
12.0
37.0
Specification
Typ.
24.9
24.6
24.0
18.5
17.3
16.4
11.0
17.0
39.0
17.0
Noise Figure,
Total Device Current
145.0
7.8
165.0
Thermal Resistance
56
Test Conditions: Z₀=50, V_CC=5V, I=165mA, T_BP=30°C
Max.
5900
26.0
20.0
17.9
9.8
185.0
Unit
MHz
dBm
dBm
dBm
dB
dB
dB
dB
dB
dBm
dBm
dB
mA
°C/W
Condition
5.1 GHz
5.5 GHz
5.9 GHz
5.1 GHz
5.5 GHz
5.9 GHz
5.1 GHz to 5.9 GHz
5.1 GHz to 5.9 GHz
P_OUT per tone=+8dBm@5.9GHz
802.11a 54Mb/s POUT@3% EVM@5.9GHz,
I = 165 mA
5.9 GHz
I_VBIAS+I_CTOTAL= 150 mA, I_VPC12=15 mA
junction - lead
DS110714
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
1 of 8