STA-5063Z Datasheet, PDF (1/10 Pages) SIRENZA MICRODEVICES – 3.3 - 6.2 GHz General Purpose 3.3V 15dBm Amplifier

STA-5063Z
3.3GHz to
6.2GHz Gen-
eral Purpose
3.3V 15 dBm
Amplifier
STA-5063Z
3.3GHz to 6.2GHz GENERAL PURPOSE 3.3V
15dBm AMPLIFIER
Package: SOT-363, 2.0mmx2.1mm
Product Description
RFMD’s STA-5063Z is a general purpose class A linear amplifier which utilizes
InGaP GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost
surface- mountable plastic package. This product is specifically designed as a
driver amplifier for WLAN 802.11a and 5.8GHz ISM band and 3.3GHz to 3.8GHz
fixed wireless applications. It can run from a fixed 3.0V to 3.6V supply with its on
chip active bias network which includes a power up and down control. On-chip
impedance matching circuitry provides a 50 nominal RF input and output imped-
ance. Its high linearity makes it an ideal choice for multicarrier and digital applica-
Optimum Technology ^{tions. Housed in an industry standard SOT-363 package, it has}
Matching® Applied _{no blind solder joints and designed for low cost. This product is}
GaAs HBT
offered in a RoHS Compliant and Green package with matte
GaAs MESFET
 InGaP HBT
tin finish, designated by the “Z” package suffix.
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
BiFET HBT
LDMOS
Features
 Linear Class A Performance
 P_1dB=17.5dBm at 3.5GHz
 P_1dB=15dBm at 5.9GHz
 IP₃=30dBm at 3.5GHz
 IP₃=27dBm at 5.9GHz
 Power Up/Down Control<1uS
 Active Bias Controlled
 Robust Class 1C ESD Rating
Applications
 Driver Stage for 802.11a
Access Points
 Wimax 802.16 Driver Stage
 Low Power 5.8GHz ISM Out-
put Stage
 Fixed Wireless, UNII Driver
Stage
Parameter
Specification
Min.
Typ.
Max.
Small Signal Gain
17.5
19.0
21.0
13.2
14.7
16.7
12.5
14.0
16.0
Output Power at 1dB Compression
17.5
15.0
13.5
15.0
Output Third Order Intercept Point
28.0
30.0
25.0
27.0
Frequency of Operation
3.3
6.2
Noise Figure
9.0
10.5
Input VSWR
1.5
2.0
Output VSWR
2.0
2.6
Total Device Current
42.0
52.0
62.0
Thermal Resistance
150
Test Conditions: Evaluation Board, Z₀=50, V_CC=3.3V, I_Q=52mA, T=25°C
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
GHz
dB
mA
°C/W
Condition
3.5GHz with 3GHz app circuit
5.1GHz with 5GHz app circuit
5.9GHz with 5GHz app circuit
3.5GHz with 3GHz app circuit
5.1GHz with 5GHz app circuit
5.9GHz with 5GHz spp circuit
3.5 GHz
5.9 GHz
5.9 GHz
5.1GHzto5.9GHz for 5GHz app circuit
5.1GHzto5.9GHz for 5GHz app circuit
junction to backside
DS110205
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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