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SPF5189Z Datasheet, PDF (1/11 Pages) RF Micro Devices – Broadband Internal Matching
SPF5189Z
50MHz to
4000 MHz,
GaAs pHEMT
Low Noise
MMIC Ampli-
fier
SPF5189Z
50MHz to 4000MHz, GaAs pHEMT LOW NOISE
MMIC AMPLIFIER
Product Description
The SPF5189Z is a high performance pHEMT MMIC LNA designed for
operation from 50MHz to 4000MHz. The on-chip active bias network pro-
vides stable current over temperature and process threshold voltage vari-
ations. The SPF5189Z offers ultra-low noise figure and high linearity
performance in a gain block configuration. Its single-supply operation and
integrated matching networks make implementation remarkably simple. A
high maximum input power specification make it ideal for high dynamic
range receivers.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
 GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Features
 Ultra-Low Noise Figure=0.60dB
at 900MHz
 Gain=18.7dB at 900MHz
 High Linearity: OIP3=39.5dBm
at 1960MHz
 P1dB=22.7dBm at 1960MHz
 Single-Supply Operation: 5V at
IDQ = 90 mA
 Flexible Biasing Options: 3V to
5V, Adjustable Current
 Broadband Internal Matching
Applications
 Cellular, PCS, W-CDMA, ISM,
WiMAX Receivers
 PA Driver Amplifier
 Low Noise, High Linearity Gain
Block Applications
Parameter
Specification
Min.
Typ.
Max.
Unit
Small Signal Gain
18.7
dB
11.3
12.8
14.3
dB
Output Power at 1dB Compression
22.4
dBm
20.7
22.7
dBm
Output Third Order Intercept Point
38.5
dBm
36.0
39.5
dBm
Noise Figure
0.55
dB
0.8
1.1
dB
Input Return Loss
17.5
dB
14.5
18.5
dB
Output Return Loss
16.0
dB
11.0
15.0
dB
Reverse Isolation
24.0
dB
18.0
dB
Device Operating Voltage
5
5.25
V
Device Operating Current
75
90
105
mA
Thermal Resistance
65
°C/W
Test Conditions: VD=5V, IDQ=90mA, TL=25°C, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm
ZS=ZL=50, 25°C, Application Circuit Data
0.9 GHz
1.96 GHz
0.9 GHz
1.96 GHz
0.9 GHz
1.96 GHz
0.9 GHz
1.96 GHz
0.9 GHz
1.96 GHz
0.9 GHz
1.96 GHz
0.9 GHz
1.96 GHz
Condition
Quiescent
Junction to lead
DS110606
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