SPF5122Z Datasheet, PDF (1/12 Pages) RF Micro Devices – 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER

SPF5122Z
50MHz to
4000 MHz,
GaAs pHEMT
Low Noise
MMIC Ampli-
fier
SPF5122Z
50MHz to 4000MHz, GaAs pHEMT LOW NOISE
MMIC AMPLIFIER
Product Description
The SPF5122Z is a high performance pHEMT MMIC LNA designed for
operation from 50MHz to 4000MHz. The on-chip active bias network pro-
vides stable current over temperature and process threshold voltage vari-
ations. The SPF5122Z offers ultra-low noise figure and high linearity
performance in a gain block configuration. Its single-supply operation and
integrated matching networks make implementation remarkably simple. A
high maximum input power specification make it ideal for high dynamic
range receivers.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
 ^{GaAs pHEMT}
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain and NF versus Frequency
Broadband Application Circuit (5V, 90mA)
25.0
4.00
22.0
3.50
19.0
3.00
16.0
2.50
13.0
2.00
10.0
1.50
7.0
1.00
4.0
Gain 0.50
NF
1.0
0.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Frequency (GHz)
Features
 Ultra-Low Noise Figure=0.60dB
at 900MHz
 Gain=18.9dB at 900MHz
 High Linearity: OIP3=40.5dBm
at 1900MHz
 Channel Power=13.4dBm (-
65dBc IS95 ACPR, 880MHz)
 P_1dB=23.4dBm at 1900MHz
 Single-Supply Operation: 5V at
I_DQ = 90 mA
 Flexible Biasing Options: 3-5V,
Adjustable Current
 Broadband Internal Matching
Applications
 Cellular, PCS, W-CDMA, ISM,
WiMAX Receivers
 PA Driver Amplifier
 Low Noise, High Linearity Gain
Block Applications
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Small Signal Power Gain
17.2
18.9
20.2
dB
0.9 GHz
11.2
12.2
14.4
dB
1.96 GHz
Output Power at 1dB Compression
20.8
22.8
dBm
0.9 GHz
21.4
23.4
dBm
1.9 GHz
Output Third Order Intercept Point
35.1
38.1
dBm
0.9 GHz
37.2
40.5
dBm
1.9 GHz
Noise Figure
0.59
0.85
dB
0.9 GHz
0.65
0.9
dB
1.9 GHz
Input Return Loss
10
14.3
dB
0.9 GHz
21
dB
1.9 GHz
Output Return Loss
14
17
dB
0.9 GHz
13
dB
1.9 GHz
Reverse Isolation
24.1
dB
0.9 GHz
18.4
dB
1.9 GHz
Device Operating Voltage
5.00
5.25
V
Device Operating Current
75
90
105
mA
Quiescent
Thermal Resistance
65
°C/W
Junction to lead
Test Conditions: V_D=5V, I_DQ=90mA, OIP₃ Tone Spacing=1MHz, P_OUT per tone=0dBm, Z_S=Z_L=50, 25°C, Broadband Application Circuit
DS110408
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mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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