SPF5043ZSQ Datasheet, PDF (1/13 Pages) RF Micro Devices – 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER

SPF5043Z
50MHz to
4000 MHz,
GaAs pHEMT
Low Noise
MMIC Ampli-
fier
SPF5043Z
50MHz to 4000MHz, GaAs pHEMT LOW NOISE
MMIC AMPLIFIER
Product Description
The SPF5043Z is a high performance pHEMT MMIC LNA designed for
operation from 50MHz to 4000MHz. The on-chip active bias network pro-
vides stable current over temperature and process threshold voltage vari-
ations. The SPF5043Z offers ultra-low noise figure and high linearity
performance in a gain block configuration. Its single-supply operation and
integrated matching networks make implementation remarkably simple.
The high maximum input power specification makes it ideal for high
dynamic range receivers.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
 ^{GaAs pHEMT}
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain and NF versus Frequency
Broadband Application Circuit (5V, 46mA)
24.0
4.0
21.0
3.5
18.0
3.0
15.0
Gain _12.0
(dB)
9.0
2.5
2.0 ^NF
(dB)
1.5
6.0
1.0
3.0
Gain 0.5
NF
0.0
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Frequency (GHz)
Features
 Ultra-Low Noise
Figure=0.8dB at 900MHz
 Gain=18.2dB at 900MHz
 High Linearity: OIP3=35dBm
at 1900MHz
 P_1dB=22.7dBm at 1900MHz
 Single-Supply Operation:
5V at I_DQ=46mA
 Flexible Biasing Options: 3V
to 5V, Adjustable Current
 Broadband Internal Matching
Applications
 Cellular, PCS, W-CDMA, ISM,
WiMAX Receivers
 Low Noise, High Linearity
Gain Block Applications
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Small Signal Power Gain
16.7
18.2
19.7
dB
0.9 GHz
11.4
12.9
14.4
dB
1.96 GHz
Output Power at 1dB Compression
17.4
22.6
dBm
0.9 GHz
22.7
dBm
1.9 GHz
Output Third Order Intercept Point
30.0
33.0
dBm
0.9 GHz
35.0
dBm
1.9 GHz
Noise Figure
0.80
1.0
dB
0.9 GHz
0.80
dB
1.9 GHz
Input Return Loss
13.0
16.0
dB
0.9 GHz
17.5
dB
1.9 GHz
Output Return Loss
14.5
17.5
dB
0.9 GHz
16.5
dB
1.9 GHz
Reverse Isolation
23.5
dB
0.9 GHz
19.0
dB
1.9 GHz
Device Operating Voltage
5
5.25
V
Device Operating Current (Quiescent)
28
46
54
mA
Thermal Resistance (junction to lead)
125
°C/W
junction to lead
Test Conditions: V_D=5V, I_DQ=46mA, OIP₃ Tone Spacing=1MHz, P_OUT per tone=-5dBm, Z_S=Z_L=50, 25°C, Broadband Application Circuit
DS110915
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