SPF-5122Z Datasheet, PDF (1/12 Pages) SIRENZA MICRODEVICES – 400-3000 MHz, GaAs pHEMT Low Noise MMIC Amplifier

Preliminary ^SPF-5122Z
50MHz to
4000 MHz,
GaAs pHEMT
Low Noise
MMIC Ampli-
fier
SPF-5122Z
50MHz to 4000MHz, GaAs pHEMT LOW NOISE
MMIC AMPLIFIER
RoHS Compliant and Pb-Free Product
Product Description
The SPF-5122Z is a high performance pHEMT MMIC LNA designed for
operation from 50MHz to 4000MHz. The on-chip active bias network pro-
vides stable current over temperature and process threshold voltage vari-
ations. The SPF-5122Z offers ultra-low noise figure and high linearity
performance in a gain block configuration. Its single-supply operation and
integrated matching networks make implementation remarkably simple. A
high maximum input power specification make it ideal for high dynamic
range receivers.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
9 ^{GaAs pHEMT}
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain and NF versus Frequency
Broadband Application Circuit (5V, 90mA)
25.0
4.00
22.0
3.50
19.0
3.00
16.0
2.50
13.0
2.00
10.0
1.50
7.0
1.00
4.0
Gain 0.50
NF
1.0
0.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Frequency (MHz)
Features
„ Ultra-Low Noise Figure=0.60dB
@ 900MHz
„ Gain=18.9dB @ 900MHz
„ High Linearity: OIP3=40.5dBm
@ 1900MHz
„ Channel Power=13.4dBm (-
65dBc IS95 ACPR, 880MHz)
„ P_1dB=23.4dBm @ 1900MHz
„ Single-Supply Operation: 5V @
Idq = 90 mA
„ Flexible Biasing Options: 3-5V,
Adjustable Current
„ Broadband Internal Matching
Applications
„ Cellular, PCS, W-CDMA, ISM,
WiMAX Receivers
„ PA Driver Amplifier
„ Low Noise, High Linearity Gain
Block Applications
Parameter
Specification
Min.
Typ.
Max.
Small Signal Power Gain
18.9
12.9
Output Power at 1dB Compression
23.0
23.4
Output Third Order Intercept Point
37.9
40.5
Noise Figure
0.59
0.64
Input Return Loss
-14.6
-21.0
Output Return Loss
-16.8
-13.0
Reverse Isolation
-24.1
-18.4
Device Operating Voltage
5.00
5.25
Device Operating Current
90
Thermal Resistance
65
Test Conditions: V_D=5V, I_DQ=90mA, OIP₃ Tone Spacing=1MHz, P_OUT per tone=0dBm
Z_S=Z_L=50Ω, 25°C, Broadband Application Circuit
Unit
dB
dB
dBm
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
dB
dB
V
mA
°C/W
0.9 GHz
1.96 GHz
0.9 GHz
1.9 GHz
0.9 GHz
1.9 GHz
0.9 GHz
1.9 GHz
0.9 GHz
1.9 GHz
0.9 GHz
1.9 GHz
0.9 GHz
1.9 GHz
Condition
Quiescent
Junction to lead
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-105470 Rev E
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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