SGL0622Z Datasheet, PDF (1/6 Pages) RF Micro Devices – 5MHz to 4000MHz LOW NOISE MMIC AMPLIFIER SILICON GERMANIUM

SGL0622Z
SGL0622Z
5MHz to 4000MHz LOW NOISE MMIC
AMPLIFIER SILICON GERMANIUM
Package: QFN, 2x2
Product Description
The SGL0622Z is a low noise, high gain MMIC LNA designed for low power
single-supply operation from 2.7V to 3.6V. Its Class-1C ESD protection
and high input overdrive capability ensures rugged performance, while its
integrated active bias circuit maintains robust stable bias over tempera-
ture and process beta variation. The SGL0622Z is internally matched from
5MHz to 4000 MHz and requires only 4 to 5 external biasing components
(DC blocks, bypass caps, inductive choke). The SGL0622Z is fabricated
using highly repeatable Silicon Germanium technology and is housed in a
cost-effective RoHS/WEEE compliant QFN 2x2 minia-
Optimum Technology
Matching® Applied
ture package.
GaAs HBT
GaAs MESFET
Typical Performance
40.0
4.00
InGaP HBT
35.0
Gain
3.50
SiGe BiCMOS
30.0
3.00
Si BiCMOS
25.0
2.50
 ^{SiGe HBT}
20.0
2.00
GaAs pHEMT
15.0
Si CMOS
10.0
1.50
NF
1.00
Si BJT
5.0
0.50
GaN HEMT
RF MEMS
0.0
100.0
600.0
1100.0 1600.0 2100.0
Frequency (MHz)
2600.0
0.00
3100.0
Features
 High Gain=28dB at 1575MHz
 Low Noise Figure=1.5dB at
1575 MHz
 Low Power Consumption,
10.5mA @ 3.3V
 Battery Operation:2.7V to 3.6V
(Active Biased)
 Fully Integrated Matching
 Class-1C ESD Protection
(>1000V HBM)
 High input overdrive capability,
+ 18 dBm
Applications
 High Gain GPS Receivers
 ISM and WiMAX LNAs
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Small Signal Gain
25.0
28.0
31.0
dB
1.575 GHz
23.0
dB
2.44 GHz
14.5
16.5
18.5
dB
3.50 GHz
Output Power at 1dB Compression
3.3
5.3
dBm
1.575 GHz
1.5
dBm
2.44 GHz
-1.4
dBm
3.50 GHz
Input Third Order Intercept Point
-16.0
-13.0
dBm
1.575 GHz
-12.0
dBm
2.44 GHz
-8.5
dBm
3.50 GHz
Input Return Loss
12.0
14.0
dB
1.575 GHz
12.0
dB
2.44 GHz
10.0
dB
3.50 GHz
Output Return Loss
6.0
9.5
dB
1.575 GHz
14.0
dB
2.44 GHz
22.0
dB
3.50 GHz
Noise Figure
1.5
1.9
dB
1.575 GHz
2.0
dB
2.44 GHz
2.8
dB
3.50 GHz
Reverse Isolation
-28.0
dB
0.05GHz to 4.0GHz
Thermal Resistance
150
°C/W
junction - lead
Device Operating Current
7.5
10.5
14.5
mA
Test Conditions: V_CC=3.3V, I_D=10.5mA Typ., IIP₃ Tone Spacing=1MHz, P_OUT per tone=-15dBm, T_L=25°C, Z_S=Z_L=50
DS140404
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support, contact RFMD at ([phone] or [e-mail].
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