SGL0363Z Datasheet, PDF (1/11 Pages) RF Micro Devices – 5MHz to 2000MHz LOW NOISE AMPLIFIER SILICON GERMANIUM

SGL0363Z
5MHz to
2000MHz Low
Noise Ampli-
fier Silicon
Germanium
SGL0363Z
5MHz to 2000MHz LOW NOISE AMPLIFIER
SILICON GERMANIUM
Package: SOT-363
Product Description
RFMD’s SGL0363Z is a low power, low noise amplifier. It is designed for
2.7V to 3.3V battery operation. The matching networks are implemented
externally which allows for optimum narrow-band performance with 20dB
typical gain and 1.1dB noise figure from 200MHz to 900MHz. This RFIC
uses the latest Silicon Germanium HBT process.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
 ^{SiGe HBT}
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Simplified Device Schematic
Vpc
Gnd
Active Bias
Network
Narrow-band
Matching
Network
RF Out
Narrow-band
Matching
RF In ^Network
Gnd
Features
 Low Power Consumption,
5.7mA at 3.3V
 External Input Noise Match
 High Gain and Low Noise,
20dB and 1.1dB respectively
at 900MHz
 Operates from 2.7V to 3.3V
 Power Shutdown Capability
using VPC
 500V ESD, Class 1B
 Small Package: SOT-363
 High input overdrive capabil-
ity, +18dBm
Applications
 Low Power LNA for ISM, Cellu-
lar and Mobile Communica-
tions
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Small Signal Gain
21.0
dB
200 MHz
18.0
20.0
22.0
dB
900 MHz
15.0
16.5
18.5
dB
1575 MHz
Output Power at 1dB Compression
1.1
dBm
200 MHz
2.5
dBm
900 MHz
1.0
3.5
dBm
1575 MHz
Output Third Order Intercept Point
17.2
dBm
200 MHz
12.9
dBm
900 MHz
11.0
14.0
dBm
1575 MHz
Input Return Loss
14.0
dBm
200 MHz
15.0
dBm
900 MHz
8.5
10.0
dBm
1575 MHz
Output Return Loss
20.0
dBm
200 MHz
12.0
dBm
900 MHz
14.0
20.0
dBm
1575 MHz
Noise Figure
1.0
dBm
200 MHz
1.1
dBm
900 MHz
1.5
2.0
dBm
1575 MHz
Reverse Isolation
24.0
dBm
200 MHz
27.0
dBm
900 MHz
Thermal Resistance
173
°C/W
junction - lead
Device Operating Current
3.5
5.2
7.0
mA
Test Conditions: V_S=3.3V, I_D=5.2mA Typ., IIP₃ Tone Spacing=1MHz, P_OUT per tone=-15dBm, T_L=25°C, Z_S=Z_L=50, Different Application Circuit per
Band
DS111011
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
1 of 11