SGL0163Z Datasheet, PDF (1/9 Pages) RF Micro Devices – 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER

SGL0163Z
100MHz to
1300MHz Sili-
con Germa-
nium
Cascadable
Low Noise
Amplifier
SGL0163Z
100MHz to 1300MHz SILICON GERMANIUM
CASCADABLE LOW NOISE AMPLIFIER
Package: SOT-363
Product Description
The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier
featuring one-micron emitters with FT up to 50GHz. This device has an
internal temperature compensation circuit permitting operation directly
from supply voltages as low as 2.5V. The SGL0163Z has been character-
ized at V_D=3V for low power and 4V for medium power applications. Only
two DC-blocking capacitors, a bias resistor, and an optional RF choke are
required for operation from 800MHz to 1300MHz.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
 ^{SiGe HBT}
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
Temperature
Compensation
Circuit
RF In
V_S
RF Out / V_S
Features
 Internally Matched to 50
800MHz to 1300MHz
 High Input/Output Intercept
 Low Noise Figure: 1.2dB Typ.
at 900MHz
 Low Power Consumption
 Single Voltage Supply Opera-
tion
 Internal Temperature Com-
pensation
Applications
 Receivers, GPS, RFID
 Cellular, Fixed Wireless, Land
Mobile
Parameter
Specification (V_S=3V)
Min.
Typ.
Max.
Specification (V_S=4V)
Min.
Typ.
Max.
Small Signal Gain
15.7
16.6
14.0
15.5
17.0
15.8
14.1
15.0
Output Power at 1dB Compres-
4.4
9.9
sion
3.2
5.2
10.1
5.6
10.5
Input Third Order Intercept
Point
5.3
12.1
5.0
7.0
13.4
9.0
14.8
Noise Figure
1.1
1.6
1.2
1.7
1.7
1.2
1.7
Input Return Loss
10.0
12.5
15.7
Output Return Loss
11.5
15.6
17.6
Reverse Isolation
20.9
20.9
Device Current
9.5
12.0
14.0
23
Thermal Resistance
255
Test Conditions: 800MHz to 1300 Application Circuit, T_LEAD=25°C, Z₀=Z_L=50
Unit
Condition
dB 800MHz
dB 900MHz
dB 1000MHz
dBm 800MHz
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
mA
°C/W
900 MHz
1000 MHz
Tone Spacing=1MHz
P_OUT per tone=-13dBm
800 MHz
900 MHz
1000 MHz
800MHz, Z_S=50
900MHz, Z_S=50
1000MHz, Z_S=50
900 MHz
900 MHz
900 MHz
DS111011
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