SGC6389Z Datasheet, PDF (1/6 Pages) RF Micro Devices – ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK

NOT FOR NEW DESIGNS
SGC-6389Z
50MHz to
4000MHz
Active Bias Sili-
con Germa-
nium
Cascadable
Gain Block
SGC-6389Z
50MHz to 4000MHz ACTIVE BIAS SILICON
GERMANIUM CASCADABLE GAIN BLOCK
Package: SOT-89
Product Description
Features
RFMD’s SGC-6389Z is a high performance SiGe HBT MMIC amplifier utiliz-  Single Fixed 5V Supply
ing a Darlington configuration with a patented active-bias network. The
active bias network provides stable current over temperature and process
 No Dropping Resistor
Required
Beta variations. Designed to run directly from a 5V supply, the SGC-6389Z
does not require a dropping resistor as compared to traditional Darlington
amplifiers. The SGC-6389Z product is designed for high linearity 5V gain
S _{block applications that require small size and minimal external compo-}
nents. It is internally matched to 50.
N _{Optimum Technology}
Matching® Applied
IG ^{GaAs HBT}
GaAs MESFET
S InGaP HBT
SiGe BiCMOS
E _{Si BiCMOS}
D ^{ SiGe HBT}
Gain and Return Loss
V_D = 5V, I_D = 84mA
30.0
20.0
S21
10.0
0.0
 Patented Self Bias Circuitry
 Gain = 12.8dBm at 1950MHz
 P1dB = 18.6dBm at
1950MHz
 OIP3 = 34.5dBm at 1950MHz
 Robust 1000V ESD, Class 1C
HBM
Applications
 PA Driver Amplifier
GaAs pHEMT
 Cellular, PCS, GSM, UMTS,
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
-10.0
-20.0
-30.0
0.0
0.5
1.0
S22
S11
W _{Bias Tee Data, ZS = ZL = 50 , TL = 25°C}
E_{1.5 2.0 2.5 3.0 3.5 4.0}
N^{Frequency (GHz)}
WCDMA
 IF Amplifier
 Wireless Data, Satellite
Parameter
R _{Small Signal Gain}
FO _{Output Power at 1dB Compression}
T _{Output Third Order Intercept Point}
O _{Input Return Loss}
N Output Return Loss
Min.
14.8
11.3
17.6
32.5
9.0
8.5
Specification
Typ.
16.3
12.8
11.9
19.5
18.6
18.2
36.0
34.5
33.5
12.5
11.5
Max.
17.8
14.3
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
850MHz
1950MHz*
2400MHz
850MHz
1950MHz*
2400MHz
850MHz
1950MHz*
2400MHz
1950MHz*
1950MHz*
Condition
Noise Figure
3.7
4.5
dB
1950MHz
Thermal Resistance
60
°C/W
junction - lead
Device Operating Voltage
5.0
V
Device Operating Current
74.0
84.0
94.0
mA
Test Conditions: V_D = 5V, I_D = 84mA Typ., OIP3 Tone Spacing = 1MHz, P_OUT per tone = 0dBm, Bias Tee Data, Z_S = Z_L = 50,
*Test results at 1950MHz measured with Application Circuit
DS20160226
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