SGC4563Z Datasheet, PDF (1/10 Pages) RF Micro Devices – 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK

SGC4563Z
SGC4563Z
50MHz to 4000MHz ACTIVE BIAS SILICON
GERMANIUM CASCADABLE GAIN BLOCK
Package: SOT-363
Product Description
RFMD’s SGC4563Z is a high performance SiGe HBT MMIC amplifier utiliz-
ing a Darlington configuration with a patented active bias network. The
active bias network provides stable current over temperature and process
Beta variations. Designed to run directly from a 3V supply, the SGC4563Z
does not require a dropping resistor as compared to typical Darlington
amplifiers. The SGC4563Z is designed for high linearity 3V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
 ^{SiGe HBT}
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain and RL versus Frequency
30
20
S21
10
Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C
0
S22
-10
S11
-20
Gain
-30
IRL
ORL
-40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Frequency (GHz)
Features
 Single Fixed 3V Supply
 No Dropping Resistor
Required
 Patented Self-Bias Circuitry
 P_1dB=15.6dBm at 1950MHz
 OIP₃=28.5dBm at 1950MHz
 Robust 1000V ESD, Class 1C
HBM
Applications
 PA Driver Amplifier
 Cellular, PCS, GSM, UMTS,
WCDMA
 IF Amplifier
 Wireless Data, Satellite
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Small Signal Gain
26.5
dB
Freq = 500 MHz
22.5
25.5
28.5
dB
Freq = *850 MHz
18.5
20.5
22.5
dB
Freq = 1950 MHz
Output Power at 1dB Compression
16.8
dBm
Freq = 500 MHz
16.5
dBm
Freq = 850 MHz
14.0
15.6
dBm
Freq = 1950 MHz
Output Third Order Intercept Point
29.5
dBm
Freq = 500 MHz
29.5
dBm
Freq = 850 MHz
26.0
28.5
dBm
Freq = 1950 MHz
Input Return Loss
14.0
18.0
dB
Freq = 1950 MHz
Output Return Loss
10.0
14.0
dB
Freq = 1950 MHz
Noise Figure
1.7
3.0
dB
Freq = 1930 MHz
Device Operating Voltage
3
V
Device Operating Current
37
48
59
mA
Thermal Resistance
120
°C/W
(R_TH, j-l) Junction to lead
Test Conditions: V_D=3.0V, I_D=48mA, T_L=25°C, OIP3 Tone Spacing=1MHz. *Bias Tee Data, Z_S=Z_L=50P_OUT per tone=0dBm, Application Circuit Data
Unless Otherwise Noted
DS140527
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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