SGC4363Z Datasheet, PDF (1/6 Pages) RF Micro Devices – 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK

SGC4363Z
50MHz to
4000 MHz
Active Bias Sili-
con Germa-
nium
Cascadable
Gain Block
SGC4363Z
50MHz to 4000MHz ACTIVE BIAS SILICON
GERMANIUM CASCADABLE GAIN BLOCK
Package: SOT-363
Product Description
RFMD’s SGC4363Z is a high performance SiGe HBT MMIC amplifier utiliz-
ing a Darlington configuration with a patented active bias network. The
active bias network provides stable current over temperature and process
Beta variations. Designed to run directly from a 3V supply, the SGC4363Z
does not require a dropping resistor as compared to typical Darlington
amplifiers. The SGC4363Z is designed for high linearity 3V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
 ^{SiGe HBT}
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss V_D = 3V, I_D = 54mA
30
S21
20
10
Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C
0
-10
S22
-20
S11
-30
0
0.5
1
1.5
2 2.5
3
3.5
4
Frequency (GHz)
Features
 Single Fixed 3V Supply
 No Dropping Resistor
Required
 Patented Self-Bias Circuitry
 P_1dB=12.4dBm at 1950MHz
 OIP₃=26.5dBm at 1950MHz
 Robust 1000V ESD, Class 1C
HBM
Applications
 PA Driver Amplifier
 Cellular, PCS, GSM, UMTS,
WCDMA
 IF Amplifier
 Wireless Data, Satellite
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Small Signal Gain, (G)
15.6
17.1
18.6
dB
850 MHz
11.2
12.7
14.2
dB
1950 MHz
11.8
dB
2400 MHz
Output Power at 1dB Compression
(P_1dB)
13.3
dBm
850 MHz
11.4
12.4
dBm
1950 MHz
11.8
dBm
2400 MHz
Output Third Order Intercept Point
(OIP₃)
28.5
dBm
850 MHz
24.5
26.5
dBm
1950 MHz
25.5
dBm
2400 MHz
Input Return Loss, (IRL)
9.5
13.5
dB
1950 MHz
Output Return Loss, (ORL)
8.5
12.5
dB
1950 MHz
Noise Figure (NF)
4.0
5.0
dB
1930 MHz
Thermal Resistance
(Junction - Lead) (Rth, j-l)
180
°C/W
Device Operating Voltage, (V_D)
3.0
V
Device Operating Current, (I_D)
48.0
54.0
60.0
mA
Test Conditions: V_D=3V, I_D=54mA Typ., OIP₃ Tone Spacing=1MHz, P_OUT per tone=-5dBm, T_L=25°C, Z_S=Z_L=50, Bias Tee Data
DS111011
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mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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