SGC-6489Z Datasheet, PDF (1/6 Pages) SIRENZA MICRODEVICES – 50-3500 MHz Silicon Germanium Active Bias Gain Block

SGC-6489Z
50MHz to
3500MHz Sili-
con Germa-
nium Active
Bias Gain
Block
NOT FOR NEW DESIGNS
SGC-6489Z
50MHz to 3500MHz SILICON GERMANIUM
ACTIVE BIAS GAIN BLOCK
Package: SOT-89
Product Description
Features
RFMD’s SGC-6489Z is a high performance SiGe HBT MMIC amplifier utiliz-  Single Supply Operation: 5V
ing a Darlington configuration with an active bias network. The active bias at I_D = 85mA
network provides stable current over temperature and process Beta varia-
tions. Designed to run directly from a 5V supply, the SGC-6489Z does not
require a dropping resistor as compared to traditional Darlington amplifi-
ers. The SGC-6489Z product is designed for high linearity 5V gain block
S _{applications that require small size and minimal external components. It is}
internally matched to 50.
N _{Optimum Technology}
Matching® Applied
IG ^{GaAs HBT}
GaAs MESFET
S InGaP HBT
SiGe BiCMOS
E _{Si BiCMOS}
 ^{SiGe HBT}
D _{GaAs pHEMT}
Gain and Return Loss
V_D = 5V, I_D = 85mA
30.0
20.0
S21
10.0
Bias Tee Data, ZS = ZL = 50  , TL
0.0
S22
-10.0
 No Dropping Resistor
Required
 Patented Self Bias Circuitry
 Gain = 19.5dBm at 1950MHz
 P1dB = 19.2dBm at
1950MHz
 IP3 = 32.8dBm at 1950MHz
 Robust 1000V ESD, Class 1C
HBM
Applications
 PA Driver Amplifier
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
-20.0
-30.0
-40.0
0.0
0.5
S11
EW _1.0
1.5
2.0
2.5
3.0
N^{Frequency (GHz)}
3.5
 Cellular, PCS, GSM, UMTS
 IF Amplifier
 Wireless Data, Satellite
Parameter
R _{Small Signal Gain}
FO _{Output Power at 1dB Compression}
T _{Output Third Order Intercept Point}
O _{Input Return Loss}
N Output Return Loss
Min.
20.7
18.0
17.7
30.8
14
8
Specification
Typ.
22.2
19.5
18.3
20.6
19.2
18.4
34.1
32.8
31.4
18
11
Max.
23.7
21.0
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
850MHz
1950MHz
2400MHz
850MHz
1950MHz
2400MHz
850MHz
1950MHz
2400MHz
1950MHz
1950MHz
Condition
Noise Figure
2.4
3.4
dB
1930MHz
Device Operating Voltage
5
V
Device Operating Current
70
82
94
mA
Thermal Resistance
70
°C/W
junction to lead
Test Conditions: V_D = 5.0V, I_D = 82mA, T_L = 25°C, OIP3 Tone Spacing = 1MHz, Bias Tee Data, Z_S = Z_L = 50, P_OUT per tone = 0dBm
DS120409
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support, contact RFMD at ([phone] or [e-mail].
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