SGC-6289Z Datasheet, PDF (1/8 Pages) RF Micro Devices – 50MHz to 3500MHz SILICON GERMANIUM ACTIVE BIAS GAIN BLOCK

NOT FOR NEW DESIGNS
SGC-6289Z
50MHz to 3500MHz SILICON GERMANIUM
ACTIVE BIAS GAIN BLOCK
Package: SOT-89
Product Description
Features
RFMD’s SGC-6289Z is a high performance SiGe HBT MMIC amplifier utiliz-  Single Supply Operation: 5V
ing a Darlington configuration with an active bias network. The active bias at I_D = 83mA
network provides stable current over temperature and process Beta varia-
tions. Designed to run directly from a 5V supply, the SGC-6289Z does not
require a dropping resistor as compared to traditional Darlington amplifi-
ers. The SGC-6289Z product is designed for high linearity 5V gain block
S _{applications that require small size and minimal external components. It is}
internally matched to 50.
N _{Optimum Technology}
Matching® Applied
IG ^{GaAs HBT}
GaAs MESFET
S InGaP HBT
SiGe BiCMOS
E _{Si BiCMOS}
 ^{SiGe HBT}
D _{GaAs pHEMT}
Si CMOS
Si BJT
W _{GaN HEMT}
InP HBT
E _{RF MEMS}
N ^LDMOS
Gain, RL & NF versus Frequency
30
20
S21
10
0
Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25°C
-10
S22
-20
S11
-30
-40
0.0
0.5
1.0
1.5
2.0
2.5
Frequency (GHz)
Gain
IRL
ORL
3.0
3.5
 No Dropping Resistor
Required
 Patented Self Bias Circuitry
 Gain = 13.5dBm at 1950MHz
 P1dB = 19.2dBm at
1950MHz
 IP3 = 33.5dBm at 1950MHz
 Robust 1000V ESD, Class 1C
HBM
Applications
 PA Driver Amplifier
 Cellular, PCS, GSM, UMTS
 IF Amplifier
 Wireless Data, Satellite
Parameter
R _{Small Signal Gain}
FO _{Output Power at 1dB Compression}
T _{Output Third Order Intercept Point}
O _{Input Return Loss}
N Output Return Loss
Min.
12.5
12.0
17.7
31.5
14.0
20.0
Specification
Typ.
14.0
14.0
13.5
19.0
19.5
19.2
34.5
34.5
33.5
18.5
25.5
Max.
15.5
15.0
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
500MHz
850MHz*
1950MHz
500MHz
850MHz
1950MHz
500MHz
850MHz
1950MHz
1950MHz
1950MHz
Condition
Noise Figure
3.3
dB
1930MHz
Device Operating Voltage
5
V
Device Operating Current
70
83
96
mA
Thermal Resistance
65
°C/W
junction to lead
Test Conditions: V_D = 5.0V, I_D = 83mA, T_L = 25°C, OIP3 Tone Spacing = 1MHz, *Bias Tee Data, Z_S = Z_L = 50, P_OUT per tone = 0dBm, Application Circuit
Data Unless Otherwise Noted
DS120409
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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