SGB6433Z Datasheet, PDF (1/8 Pages) RF Micro Devices – DC to 3.5GHz ACTIVE BIAS GAIN BLOCK

SGB-6433(Z)
SGB-6433(Z)
DC to 3.5GHz ACTIVE BIAS GAIN BLOCK
RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
Package: 3x3 QFN, 16-Pin
Product Description
Features
RFMD’s SGB-6433 is a high performance SiGe HBT MMIC amplifier utilizing a Dar- _{„ High Reliability SiGe HBT}
lington configuration with an active bias network. The active bias network provides Technology
stable current over temperature and process Beta variations. Designed to run
directly from a 5V supply the SGB-6433 does not require a drop resistor as com-
pared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD
„ Robust Class 1C ESD
„ Simple and Small Size
rating, low thermal resistance , and unconditional stability. The SGB-6433 product
is designed for high linearity 5V gain block applications that require small size and
N minimal external components. It is on chip matched to 50Ω and an external bias
inductor choke is required for the application band.
Optimum Technology
IG ^{Matching® Applied}
GaAs HBT
S _{GaAs MESFET}
E InGaP HBT
Active
NC
Bias
NC
D ^{SiGe BiCMOS}
„ P_1dB=18.5dBm at 1950MHz
„ IP₃=31dBm at 1950MHz
„ Low Thermal
Resistance = 60 C/W
Applications
„ 5V Applications
„ LO Buffer Amp
Si BiCMOS
NC
9 SiGe HBT
RFIN
GaAs pHEMT
Si CMOS
NC
Si BJT
GaN HEMT
NC
RFOUT
NEW^NC
„ RF Pre-Driver and RF Receive
Path
RF MEMS
R _Parameter
O _{Small Signal Gain}
F _{Output Power at 1dB Compression}
NOT ^{Output Third Order Intercept Point}
Min.
14.5
16.5
28.5
Specification
Typ.
20.0
16.0
15.0
18.5
18.5
17.5
33.0
31.0
31.0
Max.
17.5
Unit
dB
dB
dB
dBm
dBm
dBm
dB
dB
dB
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
Condition
Noise Figure
4.1
5.1
dB
1950 MHz
Frequency of Operation
DC
3500
MHz
Current
76
88
98
mA
Input Return Loss
12.0
15.0
dB
1950 MHz
Output Return Loss
8.5
11.5
dB
1950 MHz
Thermal Resistance
60
°C/W
junction to backside
Test Conditions: Z₀=50Ω, V_CC=5V, I_C=88mA, T=30°C
DS20160225
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