SGB2233Z Datasheet, PDF (1/8 Pages) RF Micro Devices – DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK

SGB-2233(Z)
DC to 4.5GHz
Active Bias
Gain Block
SGB-2233(Z)
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK
RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
Package: 3x3 QFN, 16-Pin
Product Description
Features
RFMD’s SGB-2233 is a high performance SiGe HBT MMIC amplifier utilizing a Dar- _{„ High Reliability SiGe HBT}
lington configuration with an active bias network. The active bias network provides Technology
stable current over temperature and process Beta variations. Designed to run
directly from a 3Vto5V supply the SGB-2233 does not require a drop resistor as
compared to typical Darlington amplifiers. This robust amplifier features a Class 1C
„ Robust Class 1C ESD
„ Simple and Small Size
ESD rating, low thermal resistance, and unconditional stability. The SGB-2233
product is designed for high linearity 3V gain block applications that require small
N size and minimal external components. It is on chip matched to 50Ω and an exter-
Optimum Technology ^{nal bias inductor choke is required for the application band.}
IG ^{Matching® Applied}
GaAs HBT
GaAs MESFET
S _{InGaP HBT}
E SiGe BiCMOS
Active
Si BiCMOS
NC
Bias
NC
D _{9 SiGe HBT}
NC
NC
„ P_1dB=6.7dBm at 1950MHz
„ IP₃=19.0dBm at 1950MHz
„ Low Thermal
Resistance = 221 C/W
Applications
„ 3V Battery Operated Applica-
tions
„ LO Buffer Amp
GaAs pHEMT
Si CMOS
RFIN
Si BJT
NC
GaN HEMT
InP HBT
RF MEMS
RFOUT
NEW^NC
„ RF Pre-Driver and RF Receive
Path
LDMOS
R _Parameter
O _{Small Signal Gain}
F _{Output Power at 1dB Compression}
NOT ^{Output Third Order Intercept Point}
Min.
11.4
5.2
16.5
Specification
Typ.
13.9
12.9
12.5
7.9
6.7
6.4
20.5
19.0
19.0
Max.
14.4
Unit
dB
dB
dB
dBm
dBm
dBm
dB
dB
dB
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
Condition
Noise Figure
4.2
5.2
dB
1950 MHz
Frequency of Operation
DC
4500
MHz
Input Return Loss
13.5
19.5
dB
1950 MHz
Output Return Loss
12.7
16.7
dB
1950 MHz
Current
21.0
25.0
29.0
mA
Thermal Resistance
221
°C/W
junction to backside
Test Conditions: Z₀=50Ω, V_CC=3V, I_C=25mA, T=30°C
DS20160224
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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