SGA9189Z Datasheet, PDF (1/5 Pages) RF Micro Devices – Medium Power Discrete SiGe Transistor

SGA9189Z
Medium Power
Discrete SiGe
Transistor
SGA9189Z
Medium Power Discrete SiGe Transistor
Package: SOT-89
Product Description
RFMD’s SGA9189Z is a high performance transistor designed for operation to
3GHz. With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.5dBm. This
RF device is based on a silicon germanium heterostructure bipolar transistor (SiGe
HBT) process. The SGA9189Z is cost-effective for applications requiring high linear-
ity even at moderate biasing levels. It is well suited for operation at both 5V and 3V.
The matte tin finish on the lead-free package utilizes a post annealing process to
mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95.
This package is also manufactured with green molding compounds that contain no
antimony trioxide nor halogenated fire retardants.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
 ^{SiGe HBT}
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Typical Gmax, OIP3, P1dB @ 5V,180mA
25
44
23
OIP3
42
21
40
19
38
17
36
Gmax
15
34
13
32
11
30
9
P1dB
28
7
26
5
24
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
Features
 50MHz to 3000MHz Operation
 39dBm Output IP3 Typ. at
1.96GHz
 12.2dB Gain Typ. at 1.96GHz
 25.5dBm P1dB Typ. at 1.96GHz
 2.1dB NF Typ. at 0.9GHz
 Cost-Effective
 3V to 5V Operation
Applications
 Wireless Infrastructure Driver
Amplifiers
 CATV Amplifiers
 Wireless Data, WLL Amplifiers
 AN-021 Contains Detailed Appli-
cation Circuits
Parameter
Maximum Available Gain
Power Gain
Output Power at 1dB Compression
Output Third Order Intercept Point
Min.
17.5
11.2
23.5
Specification
Typ.
20.5
13.2
19.0
12.2
40
25.5
40.0
Max.
20.5
13.2
Noise Figure
36.5
39.0
2.1
DC Current Gain
Breakdown Voltage
Thermal Resistance
Device Operating Voltage
2.6
100
180
300
7.5
8.5
47
5.5
Operating Current
155
180
195
Test Conditions: V_CE = 5V, I_CQ = 180mA (unless otherwise noted), T_L = 25°C.
[1] 100% Tested [2] Sample Tested
Unit
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dB
dB
V
°C/W
V
mA
Condition
900MHz, Z_S = Z_S*, Z_L = Z_L*
1960MHz
900MHz [1], Z_S = Z_SOPT, Z_L = Z_LOPT
1960MHz [2]
900MHz, Z_S = Z_SOPT, Z_L = Z_LOPT
1960MHz [2]
900MHz, Z_S = Z_SOPT, Z_L = Z_LOPT, P_OUT = +10dBm
per tone
1960MHz [2]
900MHz, Z_S = Z_SOPT, Z_L = Z_LOPT
1960MHz
collector - emitter
junction - lead
collector - emitter
DS121018
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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