SGA8543Z Datasheet, PDF (1/5 Pages) RF Micro Devices – HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR

SGA8543Z
High IP3,
Medium Power
Discrete SiGe
Transistor
SGA8543Z
HIGH IP₃, MEDIUM POWER DISCRETE SiGe
TRANSISTOR
Product Description
RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipo-
lar Transistor (SiGe HBT) designed for operation from 50MHzto3.5GHz. The
SGA8543Z is optimized for 3.3V operation but can be biased at 2.7V for low-volt-
age battery operated systems. The device provides low NF and excellent linearity at
a low cost. It can be operated over a wide range of currents depending on the
power and linearity requirements.The matte tin finish on the lead-free “Z” package
is applied using a post annealing process to mitigate tin whisker formation and is
RoHS compliant per EU Directive 2002/95. The package body is manufactured
with green molding compounds that contain no antimony triox-
Optimum Technology
Matching® Applied
ide or halogenated fire retardants.
GaAs HBT
GaAs MESFET
Typical G_MAX, OIP₃, P_1dB
@ 3.3V, 86mA
31.0
38
InGaP HBT
28.0
SiGe BiCMOS
25.0
35
OIP3
32
Si BiCMOS
 ^{SiGe HBT}
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
22.0
19.0
16.0
P1dB
29
GM AX
26
23
13.0
20
10.0
17
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
Features
 .05GHzto3.5GHz Operation
 Lead Free, RoHS Compliant, and
Green Package
 1.5dB NF_MN at 2.44GHz
 15.6dB G_MAX at 2.44GHz
 P_1dB =+20.6dBm at 2.44GHz
 OIP₃ =+34.6dBm at 2.44GHz
 Low Cost, High Performance,
Versatility
Applications
 Analog and Digital Wireless
Systems
 3G, Cellular, PCS, RFID
 Fixed Wireless, Pager Systems
 PA Stage for Medium Power
Applications
 AN-079 Contains Detailed
Application Circuits
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Power Gain
19.0
14.0
dB
880MHz, Z_S=Z_SOPT, Z_L=Z_LOPT
dB
2440 MHz
Output Power at 1dB Compression ^[2]
20.0
dBm
880MHz, Z_S=Z_SOPT, Z_L=Z_LOPT
20.6
dBm
2440 MHz
Output Third Order Intercept Point ^[2]
33.4
dBm
880MHz, Z_S=Z_SOPT, Z_L=Z_LOPT
34.6
dBm
2440 MHz
Noise Figure
3.1
dB
880MHz, Z_S=Z_SOPT, Z_L=Z_LOPT
2.4
dB
2440 MHz
Minimum Noise Figure
1.0
dB
880MHz, I_CE=25mA, Z_S=Γ_OPT, Z_L=Z_L, NF_MIN
1.5
dB
2440 MHz
Maximum Available Gain
22.9
15.0
dB
880MHz, Z_S=Z_S, Z_L=Z_L
dB
2440 MHz
Insertion Gain ^[1]
18.0
dB
880 MHz
D_CC Current Gain
Breakdown Voltage
120
180
300
5.7
6.0
V
Collector - Emitter
Device Operating Voltage
3.8
V
Collector - Emitter
Device Operating Current
95
mA
Collector - Emitter
Thermal Resistance
151
°C/W
junction to backside
Test Conditions: V_CE=3.3V, I_CE=86mA Typ. (unless noted otherwise), T_L=25°C, OIP₃ Tone Spacing=1MHz, P_OUT per tone=5dBm
[1] 100% production tested using 50Ω contact board (no matching circuitry) [2] Data with Application Circuit
DS100809
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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