SGA8343Z Datasheet, PDF (1/13 Pages) RF Micro Devices – LOW NOISE, HIGH GAIN SiGe HBT

SGA8343ZLow
Noise, High
Gain SiGe HBT
SGA8343Z
LOW NOISE, HIGH GAIN SiGe HBT
Package: SOT-343
Product Description
RFMD’s SGA8343Z is a high performance Silicon Germanium Hetero-
structure Bipolar Transistor (SiGe HBT) designed for operation from DC to
6GHz. The SGA8343Z is optimized for 3V operation but can be biased at
2V for low-voltage battery operated systems. The device provides high
gain, low NF, and excellent linearity at a low cost. It can be operated at
very low bias currents in applications where high linearity is not required.
The matte tin finish on the lead-free package utilizes a post annealing pro-
cess to mitigate tin whisker formation and is RoHS compliant per EU Direc-
Optimum Technology ^{tive 2002/95. This package is also manufactured with}
Matching® Applied _{green molding compounds that contain no antimony tri-}
GaAs HBT
oxide nor halogenated fire retardants.
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Typical Performance - 3V, 10mA
40
2.4
Si BiCMOS
 ^{SiGe HBT}
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
35
2.1
30
1.8
25
NF_MIN
1.5
20
1.2
15
Gmax
0.9
10
Gain
0.6
5
0.3
0
0
0123 45678
Frequency (GHz)
LDMOS
Features
 DC to 6GHz Operation
 0.9dB NF_MIN at 0.9GHz
 24dB GMAX at 0.9GHz
 |GOPT|=0.10 at 0.9GHz
 OIP3=+28dBm, P1dB=+9dBm
 Low Cost, High Performance, Ver-
satility
Applications
 Analog and Digital Wireless Sys-
tems
 3G, Cellular, PCS, RFID
 Fixed Wireless, Pager Systems
 Driver Stage for Low Power Appli-
cations
 Oscillators
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Maximum Available Gain
23.9
dB
0.9GHz, Z_S=Z_S*, Z_L=Z_L*
19.3
dB
1.9 GHz
17.7
dB
2.4 GHz
Minimum Noise Figure
0.94
dB
0.9GHz, Z_S=Gamma_OPT, Z_L=Z_L*
1.10
dB
1.9 GHz
1.18
dB
2.4 GHz
Insertion Gain
21.0
22.0
23.0
dB
0.9GHz, Z_S=Z_L=50^{}
Noise Figure
1.40
1.75
dB
1.9GHz, LNA Application Circuit Board^[2]
Gain
15.5
16.5
17.5
dB
1.9GHz, LNA Application Circuit Board^[2]
Output Third Order Intercept Point
25.8
27.8
dBm
1.9GHz, LNA Application Circuit Board^[2]
Output 1dB Compression Point
7.5
9.0
dBm
1.9GHz, LNA Application Circuit Board^[2]
DC Current Gain
120
180
300
Breakdown Voltage
5.7
6.0
V
collector - emitter
Thermal Resistance
200
°C/W
junction - lead
Operating Voltage
4.0
V
collector - emitter
Operating Current
50
mA
collector - emitter
Test Conditions_CE=3V, I_CQ=10mA, 25°C (unless otherwise noted), [1] 100% tested - Insertion gain tested using a 50W contact board (no matching cir-
cuitry) during final production test. [2] Sample tested - Samples pulled from each wafer/package lot. Sample test specifications are based on statisti-
cal data from sample test measurements. The test fixture is an engineering application circuit board (parts are pressed down on the board). The
application circuit represents a trade-off between the optimal noise match and input return loss.
DS110620
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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