SGA7489Z Datasheet, PDF (1/6 Pages) RF Micro Devices – DC to 3000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK

SGA7489ZDC
to 3000MHz
Silicon Germa-
nium HBT Cas-
cadable Gain
Block
SGA7489Z
DC to 3000MHz SILICON GERMANIUM HBT
CASCADABLE GAIN BLOCK
Package: SOT-89
Product Description
The SGA7489Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high F_T and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
 ^{SiGe HBT}
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain, Return Loss, and Isolation vs. Frequency
V_D=5.0V, I_D=115mA (Typ), T_LEAD=+25C
30
25
Gain
20 _{Input Return}
Loss
15
10
Output
Return Loss
5
Isolation
0
0
500
1000
1500
2000
2500
Frequency (MHz)
0
-5
-10
-15
-20
-25
-30
3000
Features
 DC to 3000MHz Operation
 Very High IF Output IP₃:
39dBm at 100MHz
 High Output IP₃: +35.5dBm
typ. at 850MHz
 Low Noise Figure: 3.3dB typ.
at 1950MHz
Applications
 Oscillator Amplifiers
 PA for Low/Medium Power
Applications
 IF/RF Buffer Amplifier
 Drivers for CATV Amplifiers
 LO Driver Amplifier
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Small Signal Gain
20.0
21.5
23.0
dB
850 MHz
17.0
18.5
20.0
dB
1950 MHz
Output Power at 1dB Compression
22.4
dBm
850 MHz
18.5
20.0
dBm
1950 MHz
Output Third Intercept Point
39.0
dBm
100 MHz
35.5
dBm
850 MHz
31.0
33.0
dBm
1950 MHz
36.0*
dBm
1950MHz, Using 2GHz App. Ckt.
Bandwidth Determined by Return
Loss
3000
MHz
>9 dB
Input Return Loss
10.3
15.0
dB
1950 MHz
Output Return Loss
9.0
11.0
dB
1950 MHz
Noise Figure
Reverse Isolation
3.3
23.0
4.3
dB
1950MHz, Z_S=50Ω
dB
1950 MHz
Device Operating Voltage
4.7
5.0
5.3
V
Device Operating Current
103
115
127
mA
Thermal Resistance
(Junction - Lead)
82
°C/W
Test Conditions: V_S=8V, I_D=115mA Typ., OIP₃ Tone Spacing=1MHz, P_OUT per tone=0dBm, R_BIAS=26Ω, T_L=25°C, Z_S=Z_L=50Ω
DS100915
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support, contact RFMD at ([phone] or [e-mail].
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