SGA5486Z Datasheet, PDF (1/6 Pages) RF Micro Devices – DC to 3500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER

SGA5486ZDC
to 3500MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA5486Z
DC to 3500MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-86
Product Description
The SGA5486Z is a high performance SiGe HBT MMIC Amplifier. A Darlington con-
figuration featuring one-micron emitters provides high F_T and excellent thermal per-
formance. The heterojunction increases breakdown voltage and minimizes leakage
current between junctions. Cancellation of emitter junction non-linearities results in
higher suppression of intermodulation products. Only two DC-blocking capacitors, a
bias resistor, and an optional RF choke are required for operation.
Features
 High Gain: 16.3dB at
1950 MHz
 Cascadable 50
 Operates from Single Supply
 Low Thermal Resistance
Package
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
 ^{SiGe HBT}
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss vs. Frequency
V_D= 3.6 V, I_D= 60 mA (Typ.)
24
0
GAIN
18
-10
IRL
12
-20
ORL
6
T_L=+25-º3C0
0
-40
0
1
2
3
4
5
Frequency (GHz)
Applications
 PA Driver Amplifier
 Cellular, PCS, GSM, UMTS
 IF Amplifier
 Wireless Data, Satellite
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Small Signal Gain
18.8
dB
850 MHz
16.3
dB
1950 MHz
15.4
dB
2400 MHz
Output Power at 1dB Compression
17.0
dBm
850 MHz
15.0
dBm
1950 MHz
Output Third Intercept Point
32.0
dBm
850 MHz
28.0
dBm
1950 MHz
Bandwidth Determined by Return Loss
3500
MHz
>10 dB
Input Return Loss
14.8
dB
1950 MHz
Output Return Loss
27.8
dB
1950 MHz
Noise Figure
3.6
dB
1950 MHz
Device Operating Voltage
3.1
3.5
3.9
V
Device Operating Current
54
60
66
mA
Thermal Resistance
(Junction - Lead)
97
°C/W
Test Conditions: V_S=8V, I_D=60mA Typ., OIP₃ Tone Spacing=1MHz, P_OUT per tone=0dBm, R_BIAS=75, T_L=25°C, Z_S=Z_L=50
DS110203
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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