SGA2363Z Datasheet, PDF (1/6 Pages) RF Micro Devices – DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER

SGA2363ZDC
to 5000MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA2363Z
DC to 5000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-363
Product Description
The SGA2363Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high F_T and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
 ^{SiGe HBT}
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss vs. Freq. @T_L=+25°C
24
0
GAIN
18
-10
IRL
12
-20
ORL
6
-30
0
-40
0
1
2
3
4
5
Frequency (GHz)
Features
 High Gain: 16.1dB at
1950 MHz
 Cascadable 50
 Operates from Single Supply
 Low Thermal Resistance
Package
Applications
 PA Driver Amplifier
 Cellular, PCS, GSM, UMTS
 IF Amplifier
 Wireless Data, Satellite
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Small Signal Gain
15.8
17.5
19.3
dB
850 MHz
16.1
dB
1950 MHz
15.6
dB
2400 MHz
Output Power at 1dB Compression
8.2
dBm
850 MHz
7.2
dBm
1950 MHz
Output Third Intercept Point
19.4
dBm
850 MHz
19.0
dBm
1950 MHz
Bandwidth Determined by Return
Loss
5000
MHz
>10 dB
Input Return Loss
15.1
dB
1950 MHz
Output Return Loss
25.5
dB
1950 MHz
Noise Figure
3.2
dB
1950 MHz
Device Operating Voltage
2.4
2.7
3.0
V
Device Operating Current
17
20
23
mA
Thermal Resistance
255
°C/W
junction - lead
Test Conditions: V_S=5V, I_D=20mA Typ., OIP₃ Tone Spacing=1MHz, P_OUT per tone=-5dBm, R_BIAS=120, T_L=25°C, Z_S=Z_L=50
DS111011
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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