SGA-9089Z Datasheet, PDF (1/6 Pages) SIRENZA MICRODEVICES – High IP3 Medium Power Discrete SiGe Transistor

SGA-9089Z
High IP3,
Medium Power
Discrete SiGe
Transistor
SGA-9089Z
HIGH IP₃, MEDIUM POWER DISCRETE SiGe
TRANSISTOR
Package: SOT-89
Product Description
RFMD’s SGA-9089Z is a high performance Silicon Germanium Hetero-
structure Bipolar Transistor (SiGe HBT) designed for operation from
50MHz to 4.0GHz. The SGA-9089Z is optimized for 3V operation. The
device provides excellent linearity at a low cost. It can be operated over a
wide range of currents depending on the power and linearity require-
ments.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
9 ^{SiGe HBT}
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Typical G_MAX, OIP₃, P_1dB
VCE = 3.0V, ICE = 170mA
24.0
41
22.0
20.0
38
OIP3
35
18.0
32
GMAX
16.0
29
14.0
26
12.0
23
P1dB
10.0
20
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
Features
„ 0.05GHz to 4GHz Operation
„ 15.0dB G_MAX at 2.44GHz
„ P_1dB=+23.8dBm at 2.44GHz
„ OIP₃=+37.5dBm at 2.44GHz
„ 3.1dB NF at 2.44GHz
„ Low Cost, High Performance,
Versatility
Applications
„ Analog and Digital Wireless
Systems
„ 3G, Cellular, PCS, RFID
„ Fixed Wireless, Pager Sys-
tems
„ PA Stage for Medium Power
Applications
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Maximum Available Gain, Z_S=Z_S*,
Z_L = Z_L*
23.2
dB
880 MHz
16.4
dB
1960 MHz
15.0
dB
2440 MHz
Output Power at 1dB Compression^[2],
Z_S= Z_SOPT, Z_L=Z_LOPT
23.7
dBm
880MHz and 1960MHz
23.8
dBm
2440 MHz
Output Third Order Intercept Point,
37.4
Z_S= Z_SOPT, Z_L=Z_LOPT
dBm
880 MHz
37.5
dBm
1960MHz and 2440MHz
Power Gain, Z_S=Z_SOPT, Z_L=Z_LOPT
18.0
dB
880 MHZ^[1]
13.0
dB
1960 MHz^[2]
11.0
dB
2440 MHz^[2]
Noise Figure^[2], Z_S=Z_SOPT, Z_L=Z_LOPT
3.2
dB
880 MHz
3.1
dB
1960 MHz
3.1
dB
2440 MHz
DC Current Gain
100
180
300
Thermal Resistance
48
°C/W
Junction - lead
Breakdown Voltage
5.7
6.0
V
Collector - Emitter
Device Operating Voltage
3.8
V
Collector - Emitter
Device Operating Current
220
mA
Collector - Emitter
Test Conditions:V_CE=3V, I_CE=170mA Typ. (unless otherwise noted), T_L=25°C OIP₃ Tone Spacing=1MHz, P_OUT per tone=10dBm
[1] 100% production tested with Application Circuit [2] Data with Application Circuit
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-105051 Rev F
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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