SBW-5089-Z Datasheet, PDF (1/8 Pages) RF Micro Devices – DCto8GHz CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER

SBW-5089(Z)
DC to 8 GHz
Cascadable
InGaP/GaAs
HBT MMIC
Amplifier
SBW-5089(Z)
DCto8GHz CASCADABLE InGaP/GaAs HBT
MMIC AMPLIFIER
Package: SOT-89
Product Description
The SBW-5089(Z) is a high performance InGaP/GaAs HBT MMIC Amplifier. A Dar-
lington circuit fabricated with InGaP process technology provides broadband RF per-
formance up to 8GHz and excellent thermal performance. The heterojunction
increases breakdown voltage and minimizes leakage current between junctions.
Cancellation of emitter junction non-linearities results in high suppression of inter-
modulation products. Operation requires only a single positive voltage supply, 2 DC-
blocking capacitors, a bias resistor and an RF choke.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
 InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain Return Loss versus Frequency, I_D=80mA (Typ),
Tuned Application Circut
25
0
20
-5
Gain
15
-10
ORL
10
-15
IRL
5
-20
0
-25
0
1
2
3
4
5
6
7
8
Frequency (GHz)
Features
 Available in RoHS Compliant and
Pb-Free (Z Part Number)
 50 Cascadable Gain Block
 Wideband Flat Gain to 3GHz:
+/-1.4 dB
 P_1dB= 13.4 at 6GHz
 Input / Output VSWR
< 2:3 to 8 GHz
 Patented Thermal Design
 Single Voltage Supply Operation
Applications
 Wideband Instrumentation
 Fiber Optic Driver
 OC-48
 Basestation
 SAT COM
Parameter
Specification
Min.
Typ.
Max.
Unit
Small Signal Gain, PC board and
19.3
20.3
21.3
dB
connector losses de-embedded
17.0
18.0
19.0
dB
17.2
dB
14.5
15.5
16.5
dB
Output Power at 1dB Compression
20.1
dBm
18.4
19.4
dBm
Output Third Order Intercept Point
35.5
dBm
32.0
34.0
dBm
Output Power
13.0
dBm
Determined by Return Loss
6000
MHz
Noise Figure
3.9
4.4
dB
Worst case Input Return Loss
7.0
10.0
dB
Worst case Output Return Loss
8.0
10.0
dB
Device Operating Voltage
4.5
4.9
5.3
V
Device Operating Current
72.0
80.0
88.0
mA
Thermal Resistance
70
°C/W
Test Conditions: V_S=8V I_D=80mA Typ. OIP₃ Tone Spacing=1MHz T_L=25°C
Bias Resistance=39 P_OUT per tone=0dBm Z_S=Z_L=50
850 MHz
Condition
3000 MHz
4200 MHz
6000 MHz
850 MHz
1950 MHz
850 MHz
1950 MHz
1950MHz, -45dBc ACP IS-95 9 Forward Chan-
nels (P_OUT)
>10 dB
1950 MHz
DC to 6000 MHz
DC to 6000 MHz
junction to backside
DS091130
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