SBA5086Z Datasheet, PDF (1/6 Pages) RF Micro Devices – DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER

SBA5086Z
SBA5086Z
DCto5GHz, CASCADABLE InGaP/GaAs HBT
MMIC AMPLIFIER
Package: SOT-86
Product Description
RFMD’s SBA5086Z is a high performance InGaP/GaAs Heterojunction Bipolar Tran-
sistor MMIC Amplifier. A Darlington configuration designed with InGaP process tech-
nology provides broadband performance up to 5GHz with excellent thermal
performance. The heterojunction increases breakdown voltage and minimizes leak-
age current between junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products. Only a single positive
supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke
are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
 InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain & Return Loss
25
20
15
S21
10
5
0
-5
-10
S11
-15
-20
S22
-25
-30
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Frequency (GHz)
Features
 IP3=34.0dBm at 1950MHz
 P_OUT=13.3dBm at -45dBc
ACP IS-95 1950MHz
 Robust 1000V ESD, Class 1C
 Operates From Single Supply
 Patented Thermal Design
Applications
 PA Driver Amplifier
 Cellular, PCS, GSM, UMTS
 IF Amplifier
 Wireless Data, Satellite
Terminals
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Small Signal Gain
17.5
19.0
20.5
dB
850 MHz
15.7
17.2
18.7
dB
1950 MHz
Output Power at 1dB Compression
19.5
dBm
850 MHz
18
19.5
dBm
1950 MHz
Output Third Order Intercept Point
36.9
dBm
850 MHz
32.0
34.0
dBm
1950 MHz
Output Power
13.3
dBm
1950MHz, -45dBc ACP IS-95 9 Forward Channels
Bandwidth
5000
MHz
Return Loss >10dB
Input Return Loss
11.0
13.0
dB
1950 MHz
Output Return Loss
14.0
19.0
dB
1950 MHz
Noise Figure
4.5
5.5
dB
1950 MHz
Device Operating Voltage
4.7
4.9
5.3
V
Device Operating Current
72
80
88
mA
Thermal Resistance (junction to lead)
102
°C/W
Test Conditions: V_S=8V, I_D=80mA Typ., OIP₃ Tone Spacing=1MHz, P_OUT per tone=0dBm, R_BIAS=39, T_L=25°C, Z_S=Z_L=50
DS110722
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mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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