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RFVC1802 Datasheet, PDF (1/8 Pages) RF Micro Devices – WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 4GHZ TO 8GHZ | |||
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RFVC1802
Wideband
MMIC VCO
with Buffer
Amplifier,
4GHz to 8GHz
RFVC1802
WIDEBAND MMIC VCO WITH BUFFER
AMPLIFIER, 4GHZ TO 8GHZ
Package: QFN, 4mmx4mmx1.1mm
Features
ï® Wideband Performance
ï® POUT=+4.0dBm Typical
ï® External Resonator Not Required
ï® Single Bias Supply: +5V at 53mA
ï® Output Phase Noise: -99dBc/Hz
at 100kHz
ï® Low Profile 4mmx4mm QFN
ï® RoHS Compliant
Applications
ï® Military - Radar,
Communications, ECM/IED
ï® Satcomm - Communication
Modems
ï® Test Instrumentation
ï® Industrial/Medical Equipment
Frequency and Output Power versus VTUNE
(VS=5V, T=25°C)
10
Evaluation Board
9
7
Freq
Pout 6
8
5
7
Freq (GHz)
6
4
POUT (dBm)
3
5
2
4
1
3
0
0
2
4
6
8
10
12 14 16
18
VTUNE (V)
Functional Block Diagram
Product Description
RFMDâs RFVC1802 wideband Voltage Controlled Oscillator is a GaAs InGaP HBT
MMIC with integrated VCO core and RF output buffer. The part operates from a sin-
gle +5V supply for circuit bias and 0V to +18V VTUNE for frequency control. The
RFVC1802 is a RoHS Compliant, compact QFN, 4mmx4mm package that offers
low phase noise and low power consumption.
Ordering Information
RFVC1802S2
2 pc Sample Bag
RFVC1802PCK-410 Fully Assembled Evaluation Board
RFVC1802
5 pcs or more
DS100615
Optimum Technology Matching® Applied
GaAs HBT
ï¼GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivityâ¢, PowerStar®, POLARIS⢠TOTAL RADIO⢠and UltimateBlue⢠are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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