RFVC1801 Datasheet, PDF (1/8 Pages) RF Micro Devices – WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 5GHZ TO 10GHZ

RFVC1801
Wideband
MMIC VCO
with Buffer
Amplifier,
5GHz to
10 GHz
RFVC1801
WIDEBAND MMIC VCO WITH BUFFER
AMPLIFIER, 5GHZ TO 10GHZ
Package: QFN, 4mmx4mmx1.1mm
Frequency and Output Power versus V_TUNE
(V_S=5V, T=25°C)
12
6
Features
 Wideband Performance
 P_OUT=+3dBm Typical
 External Resonator Not Required
 Single Bias Supply: +5V at 52mA
 Output Phase Noise: -96dBc/Hz
at 100kHz
 Low Profile 4mmx4mm QFN
 RoHS Compliant
Applications
 Military - Radar,
Communications, ECM/IED
 Satcomm - Communication
Modems
 Test Instrumentation
 Industrial/Medical Equipment
11
Evaluation Board
5
10
4
9
Freq
8
(GHz)
7
3
2 ^POUT
(dBm)
1
6
0
Freq
5
-1
Pout
4
-2
0
2
4
6
8
10 12 14 16 18
V_TUNE (V)
Functional Block Diagram
Product Description
RFMD’s RFVC1801 wideband Voltage Controlled Oscillator is a GaAs InGaP HBT
MMIC with integrated VCO core and RF output buffer. The part operates from a sin-
gle +5V supply for circuit bias and 0V to +18V V_TUNE for frequency control. The
RFVC1801 is a RoHS Compliant, compact QFN, 4mmx4mm package that offers
low phase noise and low power consumption.
Ordering Information
RFVC1801S2
2 pc Sample Bag
RFVC1801PCK-410 Fully Assembled Evaluation Board
RFVC1801
5 pcs or more
DS100615
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
LDMOS
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mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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