RFPP3870 Datasheet, PDF (1/3 Pages) RF Micro Devices – GaAs/GaN Push Pull Hybrid GaAs/GaN Push Pull Hybridz

RFPP3870
GaAs/GaN Push Pull Hybrid
45MHz to 1218MHz
The RFPP3870 is a Hybrid Push Pull amplifier module. The
part employs GaAs HFET die, GaAs pHemt die and GaN
HEMT die and operates from 45MHz to 1218MHz. It provides
excellent linearity and superior return loss performance with
low noise and optimal reliability.
V+
INPUT
OUTPUT
Ordering Information
RFPP3870
Box with 50 pieces
Absolute Maximum Ratings
Parameter
RF Input Voltage (single tone)
DC Supply Over-Voltage (5 minutes)
Storage Temperature
Operating Mounting Base Temperature
Rating
75
30
-40 to +100
-30 to +100
Unit
dBmV
V
°C
°C
RFPP3870
Package: SOT-115J
Features
■ Excellent Linearity
■ Superior Return Loss Performance
■ Extremely Low Distortion
■ Optimal Reliability
■ Low Noise
■ Unconditionally Stable Under All
Terminations
■ 28.0dB Min. Gain at 1218MHz
■ 270mA Max. at 24VDC
Applications
■ 45MHz to 1218MHz CATV
Amplifier Systems
Caution! ESD sensitive device.
RoHS (Restriction of Hazardous
Substances): Compliant per EU Directive
2011/65/EU.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
DS141010
RF MICRO DEVICES^® and RFMD^® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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