RFPD2930 Datasheet, PDF (1/5 Pages) RF Micro Devices – GaAs/GaN Power Doubler Hybrid 45MHz to 1003MHz

RFPD2930
GaAs/GaN Power Doubler Hybrid
45MHz to 1003MHz
The RFPD2930 is a Hybrid Power Doubler amplifier module.
The part employs GaAs pHEMT die and GaN HEMT die, has
extremely high output capability, and is operated from 45MHz
to 1003MHz. It provides excellent linearity and superior return
loss performance with low noise and optimal reliability. DC
current of the device can be externally adjusted for optimum
distortion performance versus power consumption over a wide
range of output level.
RFPD2930
Package: SOT-115J
Features
■ Excellent Linearity
■ Superior Return Loss Performance
■ Extremely Low Distortion
■ Optimal Reliability
■ Low Noise
■ Unconditionally Stable Under All
Terminations
■ Extremely High Output Capability
■ 24.5dB Min. Gain at 1003MHz
■ 450mA Max. at 24V_DC
■ Extra Pin For Current Adjustment
Ordering Information
RFPD2930
Box with 50 Pieces
Absolute Maximum Ratings
Parameter
RF Input Voltage (single tone)
DC Supply Over-Voltage (5 minutes)
Storage Temperature
Operating Mounting Base Temperature
Applications
■ 45MHz to 1003MHz CATV
Amplifier Systems
Rating
60
30
-40 to +100
-30 to +100
Unit
dBmV
V
°C
°C
Caution! ESD sensitive device.
RoHS (Restriction of Hazardous
Substances): Compliant per EU Directive
2011/65/EU.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
DS140226
RF MICRO DEVICES^® and RFMD^® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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