RFPD2580 Datasheet, PDF (1/3 Pages) RF Micro Devices – GaAs/GaN Power Doubler Hybrid 45MHz to 1200MHz

DRAFT
DRAFT
RFPD2580
GaAs/GaN Power Doubler Hybrid
45MHz to 1200MHz
The RFPD2580 is a Hybrid Power Doubler amplifier module.
The part employs GaAs pHEMT die and GaN HEMT die, has
high output capability, and operates from 45MHz to 1200MHz.
It provides excellent linearity and superior return loss
performance with low noise and optimal reliability.
V+
INPUT
OUTPUT
Ordering Information
RFPD2580
Box with 50 pieces
Absolute Maximum Ratings
Parameter
RF Input Voltage (single tone)
DC Supply Over-Voltage (5 minutes)
Storage Temperature
Operating Mounting Base Temperature
Rating
75
30
-40 to +100
-30 to +100
Unit
dBmV
V
°C
°C
RFPD2580
Package: SOT-115J
Features
■ Excellent Linearity
■ Superior Return Loss Performance
■ Extremely Low Distortion
■ Optimal Reliability
■ Low Noise
■ Unconditionally Stable Under All
Terminations
■ Extremely High Output Capability
■ 22.5dB Min. Gain at 1200MHz
■ 450mA Max. at 24V_DC
Applications
■ 45MHz to 1200MHz CATV
Amplifier Systems
Caution! ESD sensitive device.
RoHS (Restriction of Hazardous
Substances): Compliant per EU Directive
2011/65/EU.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
DRAFT DRAFT ^{RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421}
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
DS140618
RF MICRO DEVICES^® and RFMD^® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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