RFPA2189_14 Datasheet, PDF (1/11 Pages) RF Micro Devices – GaAs HBT POWER AMPLIFIER

RFPA2189
RFPA2189
GaAs HBT POWER AMPLIFIER
0.5W, 400MHz to 2700MHz
Package: SOT-89
GND
4
Features
 -60dBc ACPR at 16dBm WCDMA
 0.5W Output Power (P1dB)
 Excellent Linearity to DC Power
Ratio
 NF=3.0dB at 880MHz
 Single-Supply 5V Operation
 Class 1C (1000V) HBM ESD
Applications
 GaAs Pre-Driver for Base Station
Amplifiers
 PA Stage for Commercial
Wireless Infrastructure
 2nd or 3rd Stage LNAs
 Class AB Operation for GSM,
DCS, PCS, UMTS, WiMAX, LTE
Transceiver Applications
1
RFIN
2
3
GND RFOUT/VCC
Functional Block Diagram
Product Description
The RFPA2189 is a single-stage GaAs HBT power amplifier specifically designed for
Wireless Infrastructure applications. It offers ultra-linear operation at a comparably
low DC power making it ideal for next generation radios requiring high efficiency. Its
external matching allows for use across various radio platforms within 400MHz to
2700MHz. The RFPA2189 offers low noise figure making it an excellent solution for
2nd and 3rd stage LNAs.
Ordering Information
RFPA2189SR
7” Reel with 100 pieces
RFPA2189SQ
Sample bag with 25 pieces
RFPA2189TR7
7” Reel with 2500 pieces
RFPA2189PCK-410 869MHz to 894MHz PCBA with 5-piece sample bag
RFPA2189PCK-411 2110MHz to 2170MHz PCBA with 5-piece sample bag
DS140731
GaAs HBT
Optimum Technology Matching® Applied
SiGe BiCMOS
GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
BiFET HBT
InGaP HBT
SiGe HBT
Si BJT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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