RFPA0133 Datasheet, PDF (1/8 Pages) RF Micro Devices – 3 TO 5 V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER

RFPA0133
3 TO 5 V PROGRAMMABLE GAIN HIGH
EFFICIENCY POWER AMPLIFIER
Package Style: QFN, 16-Pin, 3 mm x 3 mm
Features
 0.5W CW Output Power at
3.6 V
 1W CW Output Power at 5V
 32dB Small Signal Gain at
900 MHz
 >60% Efficiency @ P_SAT
 Digitally Controlled Output
Power
 380MHz to 960MHz
Frequency Range
 High Isolation
Applications
 Analog Communication
Systems
 900MHz Spread Spectrum
Systems
 400MHz Industrial Radios
 Driver Stage for Higher Power
Applications
 3V to 5V Applications
 High Isolation Buffer
Functional Block Diagram
Product Description
The RFPA0133 is a 3 V to 5 V high efficiency programmable gain amplifier
IC. The device is manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process. The device has been designed
to offer saturated efficiency greater than 60% over a range of frequencies
from 380 MHz to 960 MHz.
Ordering Information
RFPA0133SQ
Sample Bag with 25 Pieces
RFPA0133SR
7” Reel with 100 Pieces
RFPA0133TR7
7” Reel with 750 Pieces
RFPA0133TR13 13” Reel with 2500 Pieces
RFPA0133PCK-410 860MHz to 930MHz PCBA with 5-piece Sample Bag
RFPA0133PCK-411 430MHz to 470MHz PCBA with 5-piece Sample Bag
DS100902
Optimum Technology Matching® Applied
GaAs HBT
SiGe BiCMOS
GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
RF MEMS
InGaP HBT
SiGe HBT
Si BJT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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