RFHA1043 Datasheet, PDF (1/11 Pages) RF Micro Devices – 150W GaN Power Amplifier

RFHA1043
150W GaN Power Amplifier
1.2GHz to 1.85GHz
RFHA1043
The RFHA1043 is optimized for applications in the 1.2GHz to
1.85GHz frequency band. Using an advanced 48V high power
density gallium nitride (GaN) semiconductor process optimized for
high peak to average ratio applications, these high performance
amplifiers achieve high efficiency and flat gain over a broad
frequency range in a single amplifier design. The RFHA1043 is an
input matched GaN transistor packaged in an air cavity ceramic
package, which provides excellent thermal stability. Ease of
integration is accomplished through the incorporation of simple
optimized matching networks external to the package that provide
wideband gain, efficiency, and linearizable performance in a
single amplifier.
Functional Block Diagram
Ordering Information
RFHA1043S2
Sample bag with 2 pieces
RFHA1043SB
Bag with 5 pieces
RFHA1043SQ
Bag with 25 pieces
RFHA1043SR
Short reel with 50 pieces
RFHA1043TR13
13” Reel with 300 pieces
RFHA1043PCBA-410 Fully assembled evaluation board
Package: Flanged Ceramic, 2 pin,
RF400-2
Features
■ Advanced GaN HEMT Technology
■ Peak Power 150W
■ Advanced Heat-Sink Technology
■ Single Circuit for 1.2GHz to
1.85GHz
■ 48V Modulated Typical
Performance
 P_OUT 45.2dBm
 Gain 15.5dB
 Drain Efficiency 30%
 ACP-30dBc
■ 48V CW Typical Broadband
Performance
 P_OUT 52dBm
 Gain 13.5dB
 Drain Efficiency 51%
■ -40°C to 85°C Operating
Temperature
■ Optimized for Video Bandwidth
and Minimized Memory Effects
■ Large Signal Models Available
Applications
■ Civilian and Military Radar
■ Public Mobile Radios
■ Industrial, Scientific, and Medical
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
DS131023
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trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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