RFHA1006 Datasheet, PDF (1/11 Pages) RF Micro Devices – 225MHz TO 1215MHz, 9W GaN WIDEBAND

RFHA1006
225MHz to
1215MHz, 9W
GaN Wide-
band Power
Amplifier
RFHA1006
225MHz TO 1215MHz, 9W GaN WIDEBAND
POWER AMPLIFIER
Package: AlN Leadless Chip Carrier / SO8
Features
 Advanced GaN HEMT Technology
 Output Power of 9W
 Advanced Heat-Sink Technology
 225MHz to 1215MHz
Instantaneous Bandwidth
 Input Internally Matched to 50
 28V Operation Typical
Performance
 Output Power 39.5dBm
 Gain 16dB
 Power Added Efficiency 60%
 -40°C to 85°C Operating
Temperature
 Large Signal Models Available
Applications
 Class AB Operation for Public
Mobile Radio
 Power Amplifier Stage for
Commercial Wireless
Infrastructure
 General Purpose Tx Amplification
 Test Instrumentation
 Civilian and Military Radar
VGS
Pin 1
RF IN
Pin 2,3
RF OUT / VDS
Pin 6,7
GND
BASE
Functional Block Diagram
Product Description
The RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applica-
tions such as wireless infrastructure, RADAR, two way radios and general purpose
amplification. Using an advanced high power density Gallium Nitride (GaN) semi-
conductor process, these high-performance amplifiers achieve high efficiency, flat
gain, and large instantaneous bandwidth in a single amplifier design. The
RFHA1006 is an input matched GaN transistor packaged in an air cavity ceramic
package which provides excellent thermal stability through the use of advanced
heat sink and power dissipation technologies. Ease of integration is accomplished
through the incorporation of optimized input matching network within the package
that provides wideband gain and power performance in a single amplifier. An exter-
nal output match offers the flexibility of further optimizing power and efficiency for
any sub-band within the overall bandwidth.
DS120418
Ordering Information
RFHA1006S2
RFHA1006SB
RFHA1006SQ
RFHA1006SR
RFHA1006TR7
RFHA1006PCBA-410
2-Piece sample bag
5-Piece bag
25-Piece bag
100 Pieces on 7” short reel
750 Pieces on 7” reel
Fully assembled evaluation board 225MHz to 1215MHz;
28V operation
Optimum Technology Matching® Applied
GaAs HBT
SiGe BiCMOS
 GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
BiFET HBT
InGaP HBT
SiGe HBT
Si BJT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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