RFCM2680 Datasheet, PDF (1/6 Pages) RF Micro Devices – 45MHz TO 1003MHz GaAs/GaN POWER DOUBLER MODULE

RFCM2680
45MHz to
1003MHz
GaAs/GaN
Power Dou-
bler MODULE
RFCM2680
45MHz TO 1003MHz GaAs/GaN
POWER DOUBLER MODULE
Package: 9-pin, 9.0mm x 8.0mm x 1.375mm
Features
 Excellent Linearity
 Superior Return Loss
Performance
 Extremely Low Distortion
 Optimal Reliability
 Low Noise
 Unconditionally Stable Under all
Terminations
 Extremely High Output Capability
 22.5dB Min. Gain at 1003MHz
 450mA Max. at 24VDC
Applications
 45MHz to 1003MHz CATV
Amplifier Systems
INPUT
Current Setting V+
RFCM2680
OUTPUT
Functional Block Diagram
Product Description
The RFCM2680 is a Power Doubler amplifier SMD Module. The part employs GaAs
pHEMT die and GaN HEMT die, has high output capability, and is operated from
45MHz to 1003MHz. It provides excellent linearity and superior return loss perfor-
mance with low noise and optimal reliability.
DC current of the device can be externally adjusted for optimum distortion perfor-
mance versus power consumption over a wide range of output level.
Ordering Information
RFCM2680SB
Sample bag with 5 pieces
RFCM2680SR
7” Reel with 100 pieces
RFCM2680TR7
7” Reel with 500 pieces
RFCM2680TR13
13” Reel with 1000 pieces
RFCM2680PCBA-410 Fully Assembled Evaluation Board
DS120518
GaAs HBT
  ^{Optimum Technology Matching® Applied}
SiGe BiCMOS
GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
BiFET HBT
InGaP HBT
SiGe HBT
Si BJT
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support, contact RFMD at ([phone] or [e-mail].
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