RF7413 Datasheet, PDF (1/7 Pages) RF Micro Devices – 3V WCDMA BAND 3 LINEAR PA MODULE

CONFIDENTIAL: NDA REQUIRED
RF7413
3V WCDMA BAND 3 LINEAR PA MODULE
Package Style: Module, 10-Pin, 3mm x 3mm x 1.0mm
Features
 HSDPA/HSUPA/HSPA+/LTE
 High Efficiency WCDMA
Operation: 41% at
P_OUT=+28dBm
 Low Voltage Positive Bias
Supply (3.0V to 4.2V)
 Internal Voltage Regulator -
No External (V_REF) Required
 Two Mode Power/Gain States
with Digital Control Interface
 Integrated Power Coupler
 Integrated Blocking and
Decoupling Capacitors
Applications
 WCDMA/HSPA+/LTE Wireless
Data Cards
 WCDMA/HSPA+/LTE
Handsets
VBAT 1
RF IN
2
NC ₃
VMODE ₄
VEN ₅
Bias Control &
PA/VMODE Enable
10 _VCC
9 _{RF OUT}
8 CPL IN
7 GND
6 CPL OUT
Functional Block Diagram
Product Description
The RF7413 is a high-power, high-efficiency, linear power amplifier
designed for use as the final RF amplifier in 3V, 50 WCDMA mobile cellu-
lar equipment and spread-spectrum systems. This PA is developed for
UMTS Band 3 which operates in the 1710MHz to 1785MHz frequency
band. The RF7413 has a digital control pin which enables a low power
mode to reduce amplifier gain at lower power levels. The part also has an
integrated directional coupler which eliminates the need for an external
discrete coupler at the output. The RF7413 (Band 3) meets the spectral
linearity requirements of High Speed Downlink Packet Access (HSDPA),
High Speed Uplink Packet Access (HSUPA), and Long Term Evolution (LTE)
data transmission. The RF7413 is assembled in a 10-pin, 3mm x 3mm
module.
Ordering Information
RF7413
3V WCDMA Band 3 Linear PA Module
RF7413PCBA-410 Fully Assembled Evaluation Board
DS111206
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
LDMOS
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