RF5288 Datasheet, PDF (1/15 Pages) RF Micro Devices – 3.0V TO 3.6V, DUAL-BAND FRONT-END MODULE

RF5288
3.0V TO 3.6V, DUAL-BAND FRONT-END
MODULE
Package Style: 32-Pin, 5mmx5mmx0.9mm
32
31
30
29
28
27
26
25
SWTX 1
24 GND
Features
 Single-Module Radio Front-End
 Single Supply Voltage 3.0V to
3.6 V
 Integrated 2.5GHz & 5GHZ PA’s,
Diplexer LNA for both High and
Low Band, Filters & Switches for
TX & RX
 P_OUT=18dBm, 11g, OFDM, <3%
EVM and P_OUT=16dBm, 11a,
OFDM, <4% EVM
Applications
 IEEE802.11a/b/g/n WiFi Appli-
cations
 Single-Chip RF Front-End Module
 2.5GHz and 5GHz ISM Bands
Applications
 WiFi Systems
 Portable Battery-Powered Equip-
ment
GND 2
ANT 3
Diplexer
GND 4
PA5
LNA5
23 RX5
22 PAEN5
21 LNAEN5
SWRX 5
20 LNAEN2
GND 6
LNA2
19 PAEN2
7
PA2
18 RX2
8
9
17 GND
10
11
12
13
14
15
16
Functional Block Diagram
Product Description
The RF5288 is a single-chip dual-band integrated front-end module (FEM) for high-performance
WiFi applications in the 2.5GHz and 5GHz ISM bands. The RF5288 addresses the need for
aggressive size reduction for a typical 802.11a/b/g RF front-end design and greatly reduces the
number of components outside of the core chipset therefore minimizing the footprint and
assembly cost of the overall 802.11a/b/g solution. The FEM contains integrated power amplifi-
ers for 2.5GHz and 5GHz, TX/RX switch for each band, low noise amplifier for the 5.0GHz
receive band, matching components, bypass capacitors, built-in power detector for both bands,
and band pass filters for both transmit paths and some filtering for both receive paths. The
device is manufactured on lead frame with InGap HBT and pHEMT processes. The RF5288
module is a 5mmx5mmx0.9mm package with 32-pins and a backside ground. The RF5288
greatly minimizes next level board space and allows for simplified integration.
Ordering Information
RF5288SQ
RF5288SR
RF5288TR13
RF5288PCK-410
Standard 25 piece bag
Standard 100 piece reel
Standard 2500 piece reel
Fully Assembled Evaluation Board with 5 loose sample pieces
DS110617
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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