RF3816 Datasheet, PDF (1/2 Pages) RF Micro Devices – CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 6GHz

Proposed
0
RF3816
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 6GHz
Typical Applications
• Cellular Basestation Amplifiers and
• Narrow and Broadband Commercial and
Transceivers
Military Radio Designs
• Gain Stage or Driver Amplifiers for Linear and
Saturated Amplifiers
Product Description
The RF3816 is a high-performance InGaP/GaAs general
purpose RF and microwave gain block amplifier. This
50Ω amplifier is based on a reliable HBT MMIC design,
providing unsurpassed performance for many small-sig-
nal applications. Designed with an external bias resistor,
the RF3816 provides high output power and high gain
over broad frequency range. This low-cost amplifier is
packaged in a thermally efficient, industry standard,
ceramic Micro-X package providing excellent Theta_JC
performance.
45°
+ 1°
0.055
S_{+ 0.005}
GN _0.070
I _sq.
S 0.020
+ 0.002
E _0.040
D ^{+ 0.002}
EW Optimum Technology Matching® Applied
Si BJT
GaAs HBT
GaAs MESFET
N _{Si Bi-CMOS}
SiGe HBT
Si CMOS
9^InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
NOT ^{FOR RFIN 1}
GND
4
MARKING - R1
3 RF OUT
0.200 sq.
Typ
NOTES:
1. Shaded lead is pin 1.
2. Darkened areas are metallization.
Package Style: Micro-X, 4-Pin, Ceramic
Features
• Reliable, Low-Cost HBT Design
• 12.1dB Gain, +17.3dBm P1dB@1.0GHz
• High P1dB of +14.7dBm@6.0GHz
• Single 6V Power Supply Operation
• 50Ω I/O Matched
• Thermally-Efficient Package
Ordering Information
2
GND
Functional Block Diagram
RF3816
Cascadable Broadband GaAs MMIC Amplifier DC to
6GHz (Bulk: 25 piece increment)
RF3816SB
5-piece Sample Bag
RF3816SR
100-piece Reel
RF3816TR7
7” Reel (1,000 pieces)
RF3816PCBA-410 Evaluation Board
RF Micro Devices, Inc.
Tel [phone]
7628 Thorndike Road
Fax [phone]
Greensboro, NC 27409, USA
http://www.rfmd.com
NOT FOR NEW DESIGNS
Rev A2 041013
4-1