RF1604 Datasheet, PDF (1/9 Pages) RF Micro Devices – BROADBAND HIGH POWER SP4T SWITCH

RF1604
BROADBAND HIGH POWER SP4T SWITCH
Package Style: QFN, 12-pin, 2.5mmx2.5mm
Features
 2kV HBM ESD Protection on
All Ports
 Low Frequency to >2.7GHz
Operation
 Low Insertion Loss:
0.4dB at 1GHz
 Very High Isolation: 40dB at
1 GHz
 Compatible With Low Voltage
Logic (V_HIGH Min=1.3V)
 High Linearity:
IIP2 >120dBm
 No External DC Blocking
Capacitors Required on RF
Paths Unless DC is applied
Externally
Applications
 Multi-Mode
GSM/EDGE/WCDMA, and
LTE Applications
 GSM/GPRS/EDGE Switch
Applications
 Cellular Infrastructure Appli-
cations
 Receive Diversity Switching
 General Purpose Switching
Applications
RF1604
RF1
RF2
RF3
RF4
VDD V1 V2
Functional Block Diagram
Product Description
The RF1604 is a single-pole four-throw (SP4T) switch designed for general
purpose switching applications which require very low insertion loss and
high power handling capability with minimal DC power consumption. The
excellent linearity performance achieved by the RF1604 make it ideal for
use in multimode GSM/EDGE/WCDMA, LTE, and cellular infrastructure
applications. The RF1604 offers very high isolation between the RF ports,
providing greater RF separation between the transmit and receive paths,
which is critical in full-duplex systems. Additionally, RF1604 includes inte-
grated decoding logic, allowing just two control lines needed for switch
control. The RF1604 is packaged in a very compact 2.5mmx2.5mm, 12-
pin, leadless QFN package.
Ordering Information
RF1604
Broadband High Power SP4T Switch
RF1604PCBA-410 Fully Assembled Evaluation Board
DS120125
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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