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FPD750 Datasheet, PDF (1/4 Pages) Filtronic Compound Semiconductors – 0.5W POWER PHEMT | |||
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FPD7500.5 W
Power pHEMT
FPD750
0.5W POWER pHEMT
Package Style: Bare Die
Product Description
The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor
(pHEMT), featuring a 0.25μmx750μm Schottky barrier gate, defined by high -reso-
lution stepper-based photolithography. The double recessed gate structure mini-
mizes parasitics to optimize performance. The epitaxial structure and processing
have been optimized for reliable high-power applications. The FPD750 also fea-
tures Si3N4 passivation and is available in the low-cost plastic SOT89, SOT343, and
DFN packages.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
9 GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Features
 27.5dBm Linear Output
Power at 12GHz
 11.5dB Power Gain at 12GHz
 14.5dB Max Stable Gain at
12 GHz
 38dBm OIP3
 50% Power-Added Efficiency
Applications
 Narrowband and Broadband
High-Performance Amplifiers
 SATCOM Uplink Transmitters
 PCS/Cellular Low-Voltage
High-Efficiency Output Ampli-
fiers
 Medium-Haul Digital Radio
Transmitters
Parameter
Specification
Min.
Typ.
Max.
Electrical Specifications
P1dB Gain Compression
Maximum Stable Gain (S21/S12)
26.5
13.5
27.5
14.5
Power Gain at P1dB (G1dB)
Power-Added Efficiency (PAE)
10.5
11.5
45
OIP3
38
40
Saturated Drain-Source Current (IDSS) 185
230
280
Maximum Drain-Source Current
370
(IMAX)
Transconductance (GM)
200
Gate-Source Leakage Current (IGSO)
10
Pinch-Off Voltage (VP)
|1.0|
Gate-Source Breakdown Voltage
(VBDGS)
|12.0|
|14.0|
Gate-Drain Breakdown Voltage
(VBDGD)
|14.5|
|16.0|
Thermal Resistivity (θJC)
65
Note: TAMBIENT=22°C, RF specifications measured at f=12GHz using CW signal.
Unit
Condition
dBm
dB
dB
%
dBm
dBm
mA
mA
ms
μA
V
V
V
°C/W
VDS=8V, IDS=50% IDSS
VDS=8V, IDS=50% IDSS
VDS=8V, IDS=50% IDSS
VDS=8V, IDS=50% IDSS, POUT=P1dB
VDS=8V, IDS=50% IDSS
Matched for optimal power, tuned for best IP3
VDS=1.3V, VGS=0V
VDS=1.3V, VGSâ+1V
VDS=1.3V, VGS=0 V
VGS = -5 V
VDS=1.3V, IDS=0.36mA
IGS = 0.75 mA
IGD = 0.75 mA
VDS > 6 V
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivityâ¢, PowerStar®, POLARIS⢠TOTAL RADIO⢠and UltimateBlue⢠are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A1 DS090609
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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