FPD3000 Datasheet, PDF (1/4 Pages) Filtronic Compound Semiconductors – 2W POWER PHEMT

FPD30002W
Power pHEMT
FPD3000
2W POWER pHEMT
Package Style: Bare Die
Product Description
The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transis-
tor (pHEMT), featuring a 0.25μmx3000μm Schottky barrier gate, defined by high -
resolution stepper-based photolithography. The recessed gate structure minimizes
parasitics to optimize performance. The epitaxial structure and processing have
been optimized for reliable high-power applications. The FPD3000 is also available
in the low-cost plastic SOT89 package.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
9 ^{GaAs pHEMT}
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Features
„ 32.5dBm Linear Output
Power at 12GHz
„ 6.5dB Power Gain at 12GHz
„ 8dB Max Stable Gain at
12 GHz
„ 42dBm O_IP3
„ 30% Power-Added Efficiency
Applications
„ Narrowband and Broadband
High-Performance Amplifiers
„ SATCOM Uplink Transmitters
„ PCS/Cellular Low-Voltage
High-Efficiency Output Ampli-
fiers
„ Medium-Haul Digital Radio
Transmitters
Parameter
Specification
Min.
Typ.
Max.
Electrical Specifications
P_1dB Gain Compression
31.5
Maximum Stable Gain (S21/S12)
7.0
32.5
8.0
Power Gain at P_1dB (G_1dB)
Power-Added Efficiency (PAE)
6.0
6.5
30
OIP₃
42
44
Saturated Drain-Source Current (I_DSS)
Maximum Drain-Source Current
(I_MAX)
Transconductance (G_M)
Gate-Source Leakage Current (I_GSO)
Pinch-Off Voltage (V_P)
Gate-Source Breakdown Voltage
(V_BDGS)
Gate-Drain Breakdown Voltage
(V_BDGD)
Thermal Resistivity (θJC)
750
|12.0|
|14.5|
930
1.5
800
10
|1.0|
|14.0|
|16.0|
20
1100
Note: T_AMBIENT=22°C, RF specifications measured at f=12GHz using CW signal.
Unit
Condition
dBm
dB
dB
%
dBm
dBm
mA
A
ms
μA
V
V
V
°C/W
V_DS=8V, I_DS=50% I_DSS
V_DS=8V, I_DS=50% I_DSS
V_DS=8V, I_DS=50% I_DSS
V_DS=8V, I_DS=50% I_DSS, P_OUT=P_1dB
V_DS=8V, I_DS=50% I_DSS
Matched for optimal power, tuned for best IP₃
V_DS=1.3V, V_GS=0V
V_DS=1.3V, V_GS≈+1V
V_DS=1.3V, V_GS=0 V
V_GS = -5 V
V_DS=1.3V, I_DS=3mA
I_GS = 3 mA
I_GD = 3 mA
V_DS > 6 V
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mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A1 DS090612
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
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