FPD2250 Datasheet, PDF (1/4 Pages) Filtronic Compound Semiconductors – 1.5W POWER PHEMT

FPD22501.5W
Power pHEMT
FPD2250
1.5W POWER pHEMT
Package Style: Bare Die
Product Description
The FPD2250 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transis-
tor (pHEMT), featuring a 0.25μmx2250μm Schottky barrier gate, defined by high-
resolution stepper-based photolithography. The recessed gate structure minimizes
parasitics to optimize performance. The epitaxial structure and processing have
been optimized for reliable high-power applications. The FPD2250 is also available
in the low-cost plastic SOT89 package.
Features
„ 32dBm Linear Output Power
at 12GHz
„ 7.5dB Power Gain at 12GHz
„ 42dBm O_IP3
„ 45% Power-Added Efficiency
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
9 ^{GaAs pHEMT}
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Applications
„ Narrowband and Broadband
High-Performance Amplifiers
„ SATCOM Uplink Transmitters
„ PCS/Cellular Low-Voltage
High-Efficiency Output Ampli-
fiers
„ Medium-Haul Digital Radio
Transmitters
Parameter
Specification
Min.
Typ.
Max.
Electrical Specifications
P_1dB Gain Compression
31.0
Maximum Stable Gain (S21/S12)
8.0
32.0
9.0
Power Gain at P_1dB (G_1dB)
Power-Added Efficiency (PAE)
6.5
7.5
45
OIP₃
40
42
Saturated Drain-Source Current (I_DSS) 560
700
825
Maximum Drain-Source Current
(I_MAX)
1125
Transconductance (G_M)
600
Gate-Source Leakage Current (I_GSO)
10
Pinch-Off Voltage (V_P)
|1.0|
Gate-Source Breakdown Voltage
(V_BDGS)
|12.0|
|14.0|
Gate-Drain Breakdown Voltage
(V_BDGD)
|14.5|
|16.0|
Thermal Resistivity (θJC)
30
Note: T_AMBIENT=22°C, RF specifications measured at f=12GHz using CW signal.
Unit
Condition
dBm
dB
dB
%
dBm
dBm
mA
mA
ms
μA
V
V
V
°C/W
V_DS=8V, I_DS=50% I_DSS
V_DS=8V, I_DS=50% I_DSS
V_DS=8V, I_DS=50% I_DSS
V_DS=8V, I_DS=50% I_DSS, P_OUT=P_1dB
V_DS=8V, I_DS=50% I_DSS
Matched for optimal power, tuned for best IP₃
V_DS=1.3V, V_GS=0V
V_DS=1.3V, V_GS≈+1V
V_DS=1.3V, V_GS=0V
V_GS = -5 V
V_DS=1.3V, I_DS=2.25mA
I_GS = 2.25 mA
I_GD = 2.25 mA
V_DS > 6 V
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A1 DS090612
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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