FPD1500 Datasheet, PDF (1/4 Pages) Filtronic Compound Semiconductors – 1W POWER PHEMT

FPD15001W
Power pHEMT
FPD1500
1W POWER pHEMT
Package Style: Bare Die
Product Description
The FPD1500 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transis-
tor (pHEMT), featuring a 0.25μmx1500μm Schottky barrier gate, defined by high -
resolution stepper-based photolithography. The recessed gate structure minimizes
parasitics to optimize performance. The epitaxial structure and processing have
been optimized for reliable high-power applications. The FPD1500 is also available
in the low-cost plastic SOT89 and DFN packages.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
9 ^{GaAs pHEMT}
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Features
„ 29dBm Linear Output Power
at 12GHz
„ 9dB Power Gain at 12GHz
„ 12.5dB Max Stable Gain at
12 GHz
„ 41dBm O_IP3
„ 35% Power-Added Efficiency
Applications
„ Narrowband and Broadband
High-Performance Amplifiers
„ SATCOM Uplink Transmitters
„ PCS/Cellular Low-Voltage
High-Efficiency Output Ampli-
fiers
„ Medium-Haul Digital Radio
Transmitters
Parameter
Specification
Min.
Typ.
Max.
Power at P_1dB Gain Compression
Maximum Stable Gain (S21/S12)
28.5
11.5
30.0
12.5
Power Gain at P_1dB
PAE
8.0
9.0
45
OIP₃ from 15dB to 5dB below P_1dB
41
43
Saturated Drain-Source Current (I_DSS) 375
465
550
Maximum Drain-Source Current
750
(I_MAX)
Transconductance
400
Gate-Source Leakage Current (I_GSO)
Pinch-Off Voltage (V_P)
Gate-Source Breakdown Voltage
(V_BDGS)
Gate-Drain Breakdown Voltage
(V_BDGD)
Thermal Resistivity (θJC) *
|0.7|
|12.0|
|14.5|
1
|1.0|
|14.0|
|16.0|
42
15
|1.3|
Note: T_AMBIENT=22°C, RF specifications measured at f=12GHz using CW signal.
Unit
dBm
dB
dB
%
dBm
dBm
mA
mA
ms
μA
V
V
V
°C/W
Condition
V_DS=8V, I_DS=50% I_DSS
V_DS=8V, I_DS=50% I_DSS
V_DS=8V, I_DS=50% I_DSS
V_DS=8V, I_DS=50% I_DSS, P_OUT=P_1dB
V_DS=8V, I_DS=50% I_DSS
Matched for optimal power, tuned for best IP₃
V_DS=1.3V, V_GS=0V
V_DS=1.3V, V_GS≈+1V
V_DS=1.3V, V_GS=0 V
V_GS = -5 V
V_DS=1.3V, I_DS=1.5mA
I_GS = 1.5 mA
I_GD = 1.5 mA
V_DS > 6 V
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mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A1 DS090612
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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