FPD1050 Datasheet, PDF (1/4 Pages) Filtronic Compound Semiconductors – 0.75W POWER PHEMT

FPD1050
0.75W Power
pHEMT
FPD1050
0.75W POWER pHEMT
Package Style: Bare Die
Product Description
The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transis-
tor (pHEMT), featuring a 0.25μmx1050μm Schottky barrier gate, defined by high-
resolution stepper-based photolithography. The double recessed gate structure
minimizes parasitics to optimize performance. The epitaxial structure and process-
ing have been optimized for reliable high-power applications. The FPD1050 is also
available in the low-cost plastic SOT89 package.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
9 ^{GaAs pHEMT}
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Features
„ 28.5dBm Linear Output
Power at 12GHz
„ 11dB Power Gain at 12GHz
„ 14dB Max Stable Gain at
12 GHz
„ 41dBm O_IP3
„ 45% Power-Added Efficiency
Applications
„ Narrowband and Broadband
High-Performance Amplifiers
„ SATCOM Uplink Transmitters
„ PCS/Cellular Low-Voltage
High-Efficiency Output Ampli-
fiers
„ Medium-Haul Digital Radio
Transmitters
Parameter
Specification
Min.
Typ.
Max.
P_1dB Gain Compression
S21/S12 (MSG)
27.5
28.5
14.0
Power Gain at P_1dB (G_1dB)
PAE
10.0
11.0
45
OIP₃
39
41
Saturated Drain-Source Current
260
325
385
(IDSS)
Maximum Drain-Source Current
520
(IMAX)
Transconductance (GM)
280
Gate-Source Leakage Current (IGSO)
15
Pinch-Off Voltage (V_P)
Gate-Source Breakdown Voltage
(V_BDGS)
Gate-Drain Breakdown Voltage
(V_BDGD)
Thermal Resistivity (θJC) *
|12.0|
|14.5|
|1.0|
|14.0|
|16.0|
45
*Note: T_AMBIENT=22°C, RF specifications measured at f=12GHz using CW signal.
Unit
dBm
dB
dB
%
dBm
dBm
mA
mA
ms
μA
V
V
V
°C/W
Condition
V_DS=8V, I_DS=50% I_DSS
V_DS=8V, I_DS=50% I_DSS
V_DS=8V, I_DS=50% I_DSS
V_DS=8V, I_DS=50% I_DSS, P_OUT=P_1dB
V_DS=8V, I_DS=50% I_DSS
Matched for optimal power, tuned for best IP₃
V_DS=1.3V, V_GS=0V
V_DS=1.3V, V_GS≈+1V
V_DS=1.3V, V_GS=0V
V_GS = -5 V
V_DS=1.3V, I_DS=1mA
I_GS = 3 mA
I_GD = 3 mA
V_DS > 6 V
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A0 DS080702 3.0
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