DME500 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – 500WATTS - 50 VOLTS 1025/1150 MHZ

DME 500
500 Watts, 50 Volts, Pulsed
Avionics 1025 - 1150 MHz
GENERAL DESCRIPTION
The DME 500 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1025-1150 MHz. The
device has gold thin-film metallization for proven highest MTTF. The
transistor includes input and output prematch for broadband capability. Low
thermal resistance package reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25^oC²
1700 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
55 Volts
3.5 Volts
40 Amps
- 65 to + 200^oC
+ 200^oC
CASE OUTLINE
55KT, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 ^OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
η_c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1025-1150 MHz
Vcc = 50 Volts
PW = 10 µsec
DF = 1%
F = 1090 MHz
500
Watts
125 Watts
6.0 6.5
dB
35
%
10:1
BVebo
BVces
h_FE
θjc²
Emitter to Base Breakdown
Ie = 30 mA
3.5
Collector to Emitter Breakdown Ic = 40 mA
55
DC - Current Gain
Ic = 500 mA, Vce = 5 V 10
Thermal Resistance
Volts
Volts
100
0.1 ^oC/W
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Initial Issue June, 1994
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120