CXE-2022Z Datasheet, PDF (1/6 Pages) RF Micro Devices – 50MHz to 1000MHz MMIC 75A LOW NOISE AMPLIFIER

CXE-2022Z
50MHz to
1000 MHz
MMIC 75
Low Noise
CXE-2022Z
Amplifier
50MHz to 1000MHz MMIC 75
LOW NOISE AMPLIFIER
Package: 2x2 DFN
Product Description
RFMD’s CXE-2022Z is a 75 high performance low noise pHEMT MMIC amplifier utilizing a self
bias network. The CXE-2022Z is designed to run over a wide 2.7V to 3.3V single supply voltage
and does not require a bias resistor as compared to typical Darlington amplifiers.
The CXE-2022Z was developed for low noise, portable, linear gain block consumer applications
which require small size, low current, and a few external components. The part is internally
matched to 75 and designed to operate over the 50MHz to 1000MHz bandwidth.
Features
 Low Noise Figure: 1.2dB
 Flat Gain Response: 17.5dB
± 0.15dB
 High Linearity IIP3: 0dBm
 Single Supply: 2.7V to 3.3V
 Low Current: 20mA
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
 ^{GaAs pHEMT}
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
CXE-2022Z Gain
20
19
18
17
16
15
14
470
520
570
620
670
720
770
820
870
Freq (MHz)
Applications
 DVB/T Recievers/Antennas
 DMB-T Receivers/Antennas
 PCTV and Other Portable
Devices
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Small Signal Gain
16.5
17.5
dB
500 MHz
Gain Flatness
+/- .15
dB
470MHz to 860MHz
Output Power at 1dB Compression
1.3
dBm
500 MHz
Input Third Order Intercept Point
0
dBm
500 MHz
Input Second Order Intercept Point
10
dBm
500 MHz
Input Return Loss
-13.5
dB
50MHz to 860MHz
Output Return Loss
-10
dB
50MHz to 860MHz
Noise Figure
1.2
1.5
dB
500 MHz
Device Operating Voltage
2.7
3.6
V
Device Operating Current
17
20
mA
Test Conditions: V_P=3.3V, I_D=20mA Typ, IIP_3, IIP₂ Tone Spacing= 1MHz, P_OUT per tone=-10dBm, T_L=25°C, Z_S=Z_L=75, Tested with App Circuit
DS101122
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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